High-mobility electrons in modulation-doped AlAs quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 646-648

  De Poortere, E P ^a   Shkolnikov, Y P ^a   Shayegan, M ^a  

^a Princeton University   (United States)

Author keywords

2D electron system; Aluminum arsenide; Fractional quantum Hall effect

Indexed keywords

ELECTRON MOBILITY; HALL EFFECT; MAGNETORESISTANCE; MODULATION; OSCILLATIONS; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING;

FRACTIONAL QUANTUM HALL EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036492923     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00208-4     Document Type: Conference Paper

References (9)