Analysis of dark stain on chip surface of high-power LED

2006 7th International Conference on Electronics Packaging Technology, ICEPT '06

Volumn , Issue , 2006, Pages

  Wu, Fan ^a   Wu, Yiping ^a   An, Bing ^a   Wu, Fengshun ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Dark stain; Failure analysis; Light degradation; Light emitting diodes

Indexed keywords

CHIP SCALE PACKAGES; ENERGY DISPERSIVE X RAY ANALYSIS; LUMINESCENCE; SCANNING ELECTRON MICROSCOPY; STAINED GLASS; SURFACE CHEMISTRY;

DARK STAIN; LIGHT DEGRADATION; LUMINOUS FLUXES;

LIGHT EMITTING DIODES;

EID: 34948858362     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEPT.2006.359785     Document Type: Conference Paper

References (6)

1. C.I. Chiao, K.R. Chuang, S.A. Chen, Appl. Phys. Lett. 69 (1996) 2894.
2. A.R. Schattmann, D. Wilms Floet, A. Hilberer, F. Garten, P.J.M. Smulders, T.M. Klapwiijk, G. Hadziioannou, Appl. Phys. Lett. 69(1996) 1764.
3. H. Aziz, G. Xu, Synth. Met. 80 (1996) 7.
4. W. Bijnens, J. Manca, T.D. Wu, M. D'Olieslaeger, D. Vanderzande, J. Gelan, W. de Ceuninck, L. De Schepper, L.M. Stals, Synth. Met. 83 (1996) 261.
5. T.P. Nguyen, P. Molinie', P. Le Rendu, V.H. Tran, Synth. Met. 84 (1997) 679.
6. Daniel L. Barton,Marek Osinski,Piotr Perlin, "Single-quantum well InGaN green light emitting diode degradation under high electrical stress," Microelectronics Reliability, 39 (1999) 1219-1227.