Gate controlled crossover from weak localization to weak antilocalization in a narrow gap In0.8Ga0.2As/InP heterostmcture

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue 12, 2006, Pages 4239-4242

  Nihei, Takayuki ^a   Suzuki, Yoshifumi ^a   Kohda, Makoto ^a,b   Nitta, Junsaku ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE-VOLTAGE DEPENDENCE; INTERNATIONAL CONFERENCES; NARROW GAPS; RASHBA SPIN-ORBIT INTERACTION; WEAK ANTILOCALIZATION; WEAK-LOCALIZATION;

CRYSTALS; ELECTRIC CONDUCTIVITY; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR MATERIALS;

SPIN DYNAMICS;

EID: 34848910156     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200672827     Document Type: Conference Paper

References (8)

1. J. Nitta, T. Akazaki, H. Takayanagi, and T. Enoki, Phys. Rev. Lett. 78, 1335 (1997).
2. Y. K. Kato, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Science 306, 1910 (2004).
3. M. I. Dyakonov and V. I. Perel', Sov. Phys. JETP 33, 1053 (1971).
4. G. Dresselhaus, Phys. Rev. 100, 580 (1955).
5. E. I. Rashba, Sov. Phys. Solid State 2, 1109 (1960).
6. Th. Schäpers, G. Engels, J. Lange, Th. Kocke, M. Hollfelder, and H. Lüth, J. Appl. Phys. 83, 4324 (1998).
7. Y. Lin, T. Koga, and J. Nitta, Phys. Rev. B 71, 045328 (2005).
8. S. V. Iordanskii, Y. B. Lyanda-Geller, and G. E. Pikus, JETP Lett. 60, 206 (1994).