High performance dual recess 0.15-μm pHEMT for multi-function MMIC applications

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 129-132

  Kao, Ming Yih ^a   Nayak, Sabyasachi ^a   Hajji, Rached ^a   Hillyard, Sean E ^a   Ketterson, Andrew A ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Component; Ka band; Low noise; pHEMT; Q band; TOI

Indexed keywords

AMPLIFICATION; AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MICROWAVE CIRCUITS; MICROWAVE DEVICES; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTOR MATERIALS;

(OTDR) TECHNOLOGY; COMPOUND SEMICONDUCTOR (CS); DEVICE TECHNOLOGIES; DUAL RECESS; GA TE LENGTHS; HIGH EFFICIENCY; HIGH LINEARITY; HIGH PERFORMANCE; LOW NOISE; LOW NOISE FIGURE; MILLIMETER WAVE FREQUENCIES; MULTI FUNCTIONS; OUTPUT POWER DENSITY; POWER ADDED EFFICIENCIES (PAE); POWER AMPLIFICATION; POWER GAINS; POWER PHEMT; PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR (PHEMT); THIRD ORDER INTERCEPT (TOI); UNIT CELLS;

INTEGRATED CIRCUITS;

EID: 34748829496     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319920     Document Type: Conference Paper

References (6)

1. C. F. Campbell and S. A. Brown, "A compact 40 GHz 0.5 W power amplifier MMIC," IEEE GaAs IC Symposium, Monterey, CA, 1999, pp. 141-143.
2. A. Bessemoulin, et al., "A miniaturized 0.5-watt Q-band 0.25-mm GaAs PHEMT high power amplifier MMIC," Proceedings of Gallium Arsenide Applications Symposium, 2002, Milano, Italy.
3. Kris Kong, et al., "A compact 30 GHz MMIC high power amplifier (3 W CW) in chip and packaged form," 2002 IEEE GaAs IC Symposium Digest, pp. 37-39.
4. Q. H. Wang, M. Y. Kao, S. Nayak, K. S. Kong, and C. F. Campbell, "A high power Q-band MMIC power amplifier based on dual-recess 0.15 μm pHEMT," 2004 IEEE Compound Semiconductor IC Symposium Digest, pp. 133-136.
5. Keon-Shik Kong, B. Nguyen, S. Nayak, and Ming-Yih Kao, "Ka-band MMIC high power amplifier (4W at 30GHz) with record compact size," 2005 IEEE Compound Semiconductor IC Symposium.
6. S. Nayak, et al., "0.15 μm power pHEMT manufacturing technology for Ka- and Q-Band MMIC power amplifiers," 2005 International Conference on Compound Semiconductor Manufacturing Technology.