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Volumn , Issue , 2007, Pages 645-648

A fundamental VCO with integrated output buffer beyond 120 GHz in SiGe bipolar technology

Author keywords

Heterojunction bipolar transistor; Millimeter wave circuits; SiGe; VCO; Voltage controlled oscillator

Indexed keywords

BUFFER CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; LOW NOISE AMPLIFIERS; MILLIMETER WAVE DEVICES; PHASE NOISE; SEMICONDUCTING SILICON COMPOUNDS;

EID: 34748903588     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.379984     Document Type: Conference Paper
Times cited : (15)

References (12)
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  • 2
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  • 3
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    • June
    • S. Trotta et al., "'A New Regenerative Divider by Four up to 160 GHz in SiGe Bipolar Technology," IEEE MTT-S Int. Microwave Symp. Dig., pp. 1709-1712, June 2006.
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  • 4
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    • Oct
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  • 5
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    • H. Li et al., "Millimeter-Wave VCOs With Wide Tuning Range and Low Phase Noise, Fully Integrated in a SiGe Bipolar Production Technology," IEEE Journal of Solid State Circuits, vol. 38, no. 2, pp. 184-191, Feb. 2003.
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  • 6
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    • Nov
    • S. Trotta et al., "An 84 GHz and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology," IEEE CSICS Digest of Technical Papers, pp. 21-24, Nov. 2006
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    • Trotta, S.1
  • 7
    • 0004200915 scopus 로고    scopus 로고
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  • 8
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    • Fully integrated SiGe VCOs With Powerful Output Buffer for 77-GHz Automotive Radar Systems and Applications Around 100 GHz
    • Oct
    • H. Li et al., "Fully integrated SiGe VCOs With Powerful Output Buffer for 77-GHz Automotive Radar Systems and Applications Around 100 GHz," IEEE Journal of Solid Slate Circuits, vol. 39, no. 10, pp. 1650-1658, Oct. 2004.
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  • 9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.