High Gd concentration GaGdN grown at low temperatures

Journal of Superconductivity and Novel Magnetism

Volumn 20, Issue 6, 2007, Pages 429-432

  Zhou, Yi Kai ^a   Choi, Sung Woo ^a   Kimura, Shigeya ^a   Emura, Shuichi ^a   Hasegawa, Shigehiko ^a   Asahi, Hajime ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Defects; Ferromagnetism; GaGdN; GaN based diluted magnetic semiconductor; Molecular beam epitaxy; Photoluminescence

Indexed keywords

FERROMAGNETIC CHARACTERISTICS; LUMINESCENCE BANDS; ROOM TEMPERATURE; SECONDARY PHASE;

DEFECTS; FERROMAGNETISM; GADOLINIUM; GROWTH TEMPERATURE; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; PHOTOLUMINESCENCE; SAPPHIRE; X RAY DIFFRACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34748877720     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: 10.1007/s10948-007-0245-4     Document Type: Article

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