Characterization and modeling of wire bond interconnects up to 100 GHz

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 111-114

  Jahn, Danny ^a   Reuter, Ralf ^a   Yi, Yin ^a   Feige, Jörg ^b  

^a Freescale Halbleiter GmbH   (Germany)

^b AISL Advanced Interconnect Systems Laboratory Munich   (Germany)

Author keywords

Component: die bonding; Integrated circuit bonding; Millimeter wave measurements; Modeling

Indexed keywords

BOND LENGTH; ELECTRIC CONDUCTIVITY; EQUIVALENCE CLASSES; INTEGRATED CIRCUITS; NANOSTRUCTURED MATERIALS; NETWORKS (CIRCUITS); REVERBERATION; SEMICONDUCTOR MATERIALS; WIRE;

(P ,P ,T) MEASUREMENTS; ADVANCED DESIGN SYSTEM (ADS); BOND WIRES; BROAD FREQUENCY RANGE; COMPOUND SEMICONDUCTOR (CS); CONNECTIONS (STRUCTURAL); FREQUENCY RANGING; ON-WAFER; PHYSICAL PARAMETERS; S PARAMETER CHARACTERIZATION; SMALL SIGNALS; TEST STRUCTURES; WIRE BOND (WB);

EQUIVALENT CIRCUITS;

EID: 34748875583     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319915     Document Type: Conference Paper

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