Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 193-196

  John, Jay P ^a   Chai, Francis ^a   Morgan, Dave ^a   Keller, Theresa ^a   Kirchgessner, Jim ^a   Reuter, Ralf ^a   Rueda, Heman ^a   Teplik, Jim ^a   White, Jan ^a   Wipf, Sandy ^a   Zupac, Dragan ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; LITHOGRAPHY; SEMICONDUCTOR DOPING; TRANSIT TIME DEVICES;

LOW POWER WIRELESS APPLICATIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036437768     PISSN: 10889299     EISSN: None     Source Type: Journal    
DOI: 10.1109/BIPOL.2002.1042916     Document Type: Article

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