Enhancement of white luminescence from SiNx films by surface roughening

Nanotechnology

Volumn 18, Issue 41, 2007, Pages

  Kang, Z T ^a   Wagner, B K ^a   Parrish, J ^a   Schiff, D ^a   Summers, C J ^b  

^a GEORGIA TECH RESEARCH INSTITUTE   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; SURFACE ROUGHNESS;

COLOR-RENDERING PROPERTIES; EMISSION EXTRACTION EFFICIENCY; FLOW RATIO; INTERNAL REFLECTION;

THIN FILMS;

AMMONIA; MOLECULAR LAYER; POTASSIUM HYDROXIDE; SILANE; SILICON NITRIDE;

ARTICLE; CHEMICAL INTERACTION; FIELD EMISSION; PHOTOLUMINESCENCE; PRIORITY JOURNAL; SURFACE PROPERTY; VAPOR;

EID: 34748845662     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/41/415709     Document Type: Article

References (11)

1. Fauchet P M 2005 Mater. Today 8 26
2. Wilson W L, Szajowski Pl F and Brus L E 1993 Science 262 1242
3. Pei Z, Chang Y R and Hwang H L 2002 Appl. Phys. Lett. 80 2839
4. Kahler U and Hofmeister H 2002 Appl. Phys. A 74 13
5. Zacharias M, Heitmann J, Scholz R, Kahler U, Schmidt M and Blasing J 2002 Appl. Phys. Lett. 80 661
6. Park N M, Kim T S and Park S J 2001 Appl. Phys. Lett. 78 2575
7. Ma L B, Ji A L, Liu C, Wang Y Q and Ca Z X 2004 J. Vac. Sci. Technol. B 22 2654
8. Wang Y Q, Wang Y G, Cao L and Cao Z X 2003 Appl. Phys. Lett. 83 3474
9. Kim B H, Cho C H, Kim T W, Park N M, Sung G Y and Park S J 2005 Appl. Phys. Lett. 86 091908
10. Credo G M, Mason M D and Buratto S K 1999 Appl. Phys. Lett. 74 1978
11. Tong J F, Hsiao H L and Hwang H L 1999 Appl. Phys. Lett. 74 2316