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Volumn , Issue , 2007, Pages 529-533
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Low-voltage limitations of deep-sub-100-nm CMOS LSIs: View of memory designers
a
HITACHI LTD
(Japan)
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Author keywords
Bulk; Deep sub 100 nm CMOS LSIs; DRAM; FD SOI; Leakage; Logic gate; Minimum VDD; Speed variation; SRAM; VT variation
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
DYNAMIC RANDOM ACCESS STORAGE;
LEAKAGE CURRENTS;
LOGIC GATES;
NANOELECTRONICS;
SILICON ON INSULATOR TECHNOLOGY;
STATIC RANDOM ACCESS STORAGE;
LOW VOLTAGE LIMITATION;
SPEED VARIATION;
VT VARIATION;
LSI CIRCUITS;
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EID: 34748842263
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1145/1228784.1228789 Document Type: Conference Paper |
Times cited : (3)
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References (19)
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