Intersubband transitions in InGaAs/AlAsSb coupled double quantum wells with InAlAs coupling barriers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 502-505

  Nagase, M ^a   Simoyama, T ^a   Mozume, T ^a   Hasama, T ^a   Ishikawa, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; MONOLAYERS; OPTICAL SWITCHES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THICKNESS MEASUREMENT; WAVELENGTH;

COUPLING BARRIERS; INTERSUBBAND TRANSITIONS; POTENTIAL HEIGHT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34748840252     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381238     Document Type: Conference Paper

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