Impedance anomalies and RF performance limitations in AlGaN/GaN HFET's

IEEE Wireless and Microwave Technology Conference, WAMICON 2006

Volumn , Issue , 2006, Pages

  Kuang, W ^a   Trew, R J ^a   Bilbro, G L ^a   Liu, Y ^a   Yin, H ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FINANCIAL DATA PROCESSING; GALLIUM NITRIDE; HEALTH; MICROWAVE DEVICES; MICROWAVES;

ALGAN/GAN HFET; EXPERIMENTAL DATA; FREQUENCY PERFORMANCE; HIGH-FREQUENCY (HF); INPUT POWERS; MICROWAVE TECHNOLOGY; PHYSICAL PHENOMENON; RF PERFORMANCE; SIMULATION RESULTS; SOURCE CHANNELS; SPACE CHARGE LIMITED CURRENT (SCLC);

FREQUENCY RESPONSE;

EID: 48749094275     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WAMICON.2006.351912     Document Type: Conference Paper

References (5)

1. W. Saito et al., "Influence of Surface Defect Charge at AlGaN/GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage" IEEE Transactions on Electron Devices, Vol. 52, No. 1, 2005, pp. 159-164
2. D.R. Greenberg et al., "Velocity Saturation in the Extrinsic Device: A Fundamental Limit in HFET's", IEEE Transactions on Electron Devices, Vol. 41, No. 8, 1994, pp. 1334-1339
3. T Linearity of AlGaN/GaN HEMTs", IEEE Transactions on Electron Devices, Vol. 52, No. 10, 2005, pp. 2117-2123.
4. R.J. Trew, "Modeling and Limitations of AlGaN/GaN HFET's", Int. Semicond. Device Res. Symp., Dec. 5-7, 2001, pp. 432-435.
5. R.J. Trew et al., "Nonlinear Source Resistance in High-Voltage Microwave AlGaN/GaN HFETs", IEEE Transactions on Microwave Theory and Techniques, Vol. 54, No. 5, 2006, pp. 2061-2067.