Properties of heavily Mn-doped GaMnAs with curie temperature of 172.5 K

Journal of Superconductivity and Novel Magnetism

Volumn 20, Issue 6, 2007, Pages 417-420

  Ohno, Kenichi ^a,b   Ohya, Shinobu ^a,c   Tanaka, Masaaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Ferromagnetic semiconductor; GaMnAs; Magneto optical properties; Spin transport; Spintronics

Indexed keywords

LOW-TEMPERATURE ANNEALING; MAGNETO-OPTICAL PROPERTIES; SPIN TRANSPORT;

ANNEALING; CURIE TEMPERATURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HALL EFFECT; MANGANESE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS;

MAGNETIC SEMICONDUCTORS;

EID: 34748837900     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: 10.1007/s10948-007-0238-3     Document Type: Article

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