A comparison between ZnO films doped with 3d and 4f magnetic ions

Thin Solid Films

Volumn 515, Issue 24 SPEC. ISS., 2007, Pages 8761-8763

  Ungureanu, Mariana ^a   Schmidt, Heidemarie ^a   von Wenckstern, Holger ^a   Hochmuth, Holger ^a   Lorenz, Michael ^a   Grundmann, Marius ^a   Fecioru Morariu, Marian ^b   Güntherodt, Gernot ^b  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Diluted magnetic semiconductors; ZnO

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; FERROMAGNETISM; IONS; OXYGEN VACANCIES; PARTIAL PRESSURE; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; ZINC OXIDE;

DILUTED MAGNETIC SEMICONDUCTORS; MAGNETIC IONS; OXYGEN PARTIAL PRESSURE; ROOM TEMPERATURE;

THIN FILMS;

EID: 34548826206     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.04.010     Document Type: Article

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