Electromigration characteristics in dual-damascene copper interconnects by difference of via structures

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2663-2668

  Kim, Nam Hoon ^a   Kim, Sang Yong ^b   Lee, Woo Sun ^c   Chang, Eui Goo ^b  

^a Sungkyunkwan University   (South Korea)

^b Chung Ang University   (South Korea)

^c Chosun University   (South Korea)

Author keywords

Barrier contact via (BCV); Copper; Direct contact via (DCV); Dual damascene; Electromigration (EM)

Indexed keywords

ALUMINUM; COPPER; ELECTRIC RESISTANCE; LARGE SCALE SYSTEMS;

BARRIER CONTACT VIA (BCV); BCV STRUCTURES; DIRECT CONTACT VIA (DCV); DUAL-DAMASCENE COPPER; ULTRALARGE-SCALE INTEGRATED (ULSI) CIRCUITS;

ELECTROMIGRATION;

EID: 34548824057     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.048     Document Type: Article

References (9)

1. Li B., Sullivan T.D., and Lee T.C. IEEE Trans. Device Mat. Re. 4 1 (2004) 80-85
2. Tao J., Cheung N.W., and Hu C. IEEE Electron Device Lett. 14 5 (1993) 249-251
3. Ueki M., Hiroi M., Ikarashi N., Onodera T., Furutake N., Inoue N., and Hayashi Y. IEEE Trans. Electron Dev. 51 11 (2004) 1883-1891
4. Ueno K., Suzuki M., Matsumoto A., Motoyama K., Tonegawa T., Ito N., Arita K., Tsuchiya Y., Wake T., Kubo A., Sugai K., Oda N., Miyamoto H., and Saito S. IEDM Technical Digest (2000) 265-268
5. Kirchheim R., and Kaeber U. J. Appl. Phys. 70 1 (1991) 172-181
6. Korhonen M.A., Borgesen P., Tu K.N., and Li C.Y. J. Appl. Phys. 73 8 (1993) 3790-3799
7. Lane M.W., Liniger E.G., and Lloyd J.R. J. Appl. Phys. 93 3 (2003) 1417-1421
8. Francois, and d'Heurle M. Proc. IEEE 59 10 (1971) 1409-1418
9. Blech I.A. J. Appl. Phys. 47 4 (1976) 1203-1208