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Volumn , Issue , 2007, Pages 1867-1870

Fundamental bounds on power reduction during data-retention in standby SRAM

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ERROR CORRECTION; RANDOM ACCESS STORAGE; REDUNDANCY; STANDBY POWER SERVICE; VOLTAGE CONTROL;

EID: 34548822733     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iscas.2007.378279     Document Type: Conference Paper
Times cited : (12)

References (11)
  • 1
    • 34548857769 scopus 로고    scopus 로고
    • System Drivers, International Technology Roadmap for Semiconductors, http://www.itrs.net, pp. 1-25, 2005.
    • System Drivers, "International Technology Roadmap for Semiconductors," http://www.itrs.net, pp. 1-25, 2005.
  • 5
    • 0020821981 scopus 로고
    • On the capacity of computer memory with defects
    • Sept
    • C. Heegard and A. E. Gamal, "On the capacity of computer memory with defects," IEEE Trans. on Information Theory, vol. 29, no. 5, pp. 731-739, Sept 1983.
    • (1983) IEEE Trans. on Information Theory , vol.29 , Issue.5 , pp. 731-739
    • Heegard, C.1    Gamal, A.E.2
  • 6
    • 29344453384 scopus 로고    scopus 로고
    • Cache and memory error detection, correction, and reduction techniques for terrestrial servers and workstations
    • Sept
    • C. W. Slayman, "Cache and memory error detection, correction, and reduction techniques for terrestrial servers and workstations," IEEE Trans, on Reliability, vol. 5, no. 3, pp. 397-404, Sept 2005.
    • (2005) IEEE Trans, on Reliability , vol.5 , Issue.3 , pp. 397-404
    • Slayman, C.W.1
  • 7
    • 33846061871 scopus 로고    scopus 로고
    • M. Agostinelli et al., Erratic fluctuations of SRAM cache vmin at the 90nm process technology node, in IEEE international Electron Devices Meeting, 2005. IEDM Technical Digest, Dec 2005, pp. 655-658.
    • M. Agostinelli et al., "Erratic fluctuations of SRAM cache vmin at the 90nm process technology node," in IEEE international Electron Devices Meeting, 2005. IEDM Technical Digest, Dec 2005, pp. 655-658.
  • 8
    • 0034453479 scopus 로고    scopus 로고
    • K. M. Cao et al., BSIM4 gate leakage model including sourcedrain partition, in IEEE International Electron Devices Meeting, 2000. IEDM Technical Digest, Dec 2000, pp. 815-818.
    • K. M. Cao et al., "BSIM4 gate leakage model including sourcedrain partition," in IEEE International Electron Devices Meeting, 2000. IEDM Technical Digest, Dec 2000, pp. 815-818.
  • 10
    • 0025401075 scopus 로고
    • New approaches for the repairs of memories with redundancy by row/column deletion for yield enhancement
    • Mar
    • W. K. Huang, Y. Shen, and F. Lombardi, "New approaches for the repairs of memories with redundancy by row/column deletion for yield enhancement," IEEE Trans. on CAD of Integrated Circuits and Systems, pp. 323-328, Mar. 1990.
    • (1990) IEEE Trans. on CAD of Integrated Circuits and Systems , pp. 323-328
    • Huang, W.K.1    Shen, Y.2    Lombardi, F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.