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1
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34548853260
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Wireless communications semiconductor supplier market shares
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May
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S. Smyser, "Wireless communications semiconductor supplier market shares," iSuppli Topical Report, May 2006.
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iSuppli Topical Report
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Smyser, S.1
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2
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39749111495
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A silicon 60GHz receiver and transmitter chipset for broadband communications
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February
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B. Floyd, S. Reynolds, U. Pfeiffer, T. Beukema, J. Grzyb, and C. Haynes, "A silicon 60GHz receiver and transmitter chipset for broadband communications", ISSCC Digest of Technical Papers, pp. 184-185, February 2006.
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ISSCC Digest of Technical Papers
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Floyd, B.1
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Beukema, T.4
Grzyb, J.5
Haynes, C.6
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3
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5444245779
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Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive radar systems and applications around 100GHz
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October
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H. Li, H.-M. Rein, T. Suttorp, and J. Bock, "Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive radar systems and applications around 100GHz", IEEE J. Solid-State Circuits, vol. 39, no. 10, pp. 1650-1658, October 2004.
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IEEE J. Solid-State Circuits
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Li, H.1
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Suttorp, T.3
Bock, J.4
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4
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34247632708
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A low-noise amplifier at 77GHz in SiGe:C bipolar technology
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October
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B. Dehlink, H.-D. Wohlmuth, K. Aufinger, T. F. Meister, J. Bock, and A. L. Scholtz "A low-noise amplifier at 77GHz in SiGe:C bipolar technology", Compound Semiconductor Integrated Circuit Symposium, pp. 287-290, October 2005.
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Compound Semiconductor Integrated Circuit Symposium
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Dehlink, B.1
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Aufinger, K.3
Meister, T.F.4
Bock, J.5
Scholtz, A.L.6
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5
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0035168264
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A 0.18 μm SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications
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J. Kirchgessner, et al, "A 0.18 μm SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications", Proc. BCTM, pp. 151-154, 2001.
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Proc. BCTM
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Kirchgessner, J.1
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6
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0036437768
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Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications
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J. P. John, et al, "Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications," Proc. BCTM, pp. 193-196, 2002.
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Proc. BCTM
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John, J.P.1
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7
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34548812716
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Development of a cost-effective, selective-epi, SiGe:C HBT for millimeter-wave applications
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J. P. John, et al, "Development of a cost-effective, selective-epi, SiGe:C HBT for millimeter-wave applications," Proc. BCTM, pp. 134-137, 2006.
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Proc. BCTM
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John, J.P.1
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8
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33645777356
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Low-Cost Self-Aligned SiGeC HBT Module for High-Performance Bulk and SOI RFCMOS Platforms
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P. Chevalier, et al, "Low-Cost Self-Aligned SiGeC HBT Module for High-Performance Bulk and SOI RFCMOS Platforms", IEDM Tech. Dig., pp 983-986, 2005.
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IEDM Tech. Dig
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Chevalier, P.1
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9
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21644476475
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A Low-Parasitic Collector Construction for High-Speed SiGe:C HBT's
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B. Heinemann, et al, "A Low-Parasitic Collector Construction for High-Speed SiGe:C HBT's," IEDM Tech. Dig., pp 251-254, 2004.
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IEDM Tech. Dig
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Heinemann, B.1
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10
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34548852445
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A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dB
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R. Reuter, Yi Yin, "A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dB," Proc. BCTM, pp. 247-250, 20
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Proc. BCTM
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Reuter, R.1
Yin, Y.2
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11
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34548825805
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R. Reuter, et al, Fully integrated SiGe-BiCMOS teceiver (RX) and transmitter (TX) chips for 76.5GHz FMCW automotive radar systems including demonstrator board design, to be published IMS 2007.
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R. Reuter, et al, "Fully integrated SiGe-BiCMOS teceiver (RX) and transmitter (TX) chips for 76.5GHz FMCW automotive radar systems including demonstrator board design", to be published IMS 2007.
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