Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1756-1760

  Breglio, G ^a   Irace, A ^a   Napoli, E ^a   Spirito, P ^a   Hamada, K ^b   Nishijima, T ^b   Ueta, T ^b  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; ELECTRIC POTENTIAL; FAILURE ANALYSIS; FLIP FLOP CIRCUITS; SWITCHING CIRCUITS;

CURRENT SENSING; INDUCTIVE SWITCHING; SWITCHING DEVICES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 34548671862     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.009     Document Type: Article

References (4)

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2. Kudoh M, Otsuki M, Obinata S, Momota S, Yamazaki T, Fujihira T, Sakurai K. Current sensing IGBT structure with improved accuracy, power semiconductor devices and ICs. In: ISPSD '95 Proceedings; 1995. p. 119-22.
3. Seki Y, Harada Y, Iwamuro N, Kumagai N. A new IGBT with a monolithic over-current protection circuit. In: ISPSD '94 Proceedings. p. 31-5.
4. Motto ER, Donion JF, Majumdar G, Hatae S, Ohshima S, Takanashi K. A new generation of intelligent power devices for motor drive applications. In: Industry applications society annual meeting. vol. 2; 1993. p. 1332-8.