New IGBT with a monolithic over-current protection circuit

IEEE International Symposium on Power Semiconductor Devices & ICs

Volumn , Issue , 1994, Pages 31-35

  Seki, Yasukazu ^a   Harada, Yuichi ^a   Iwamuro, Noriyuki ^a   Kumagai, Naoki ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MONOLITHIC INTEGRATED CIRCUITS; MOSFET DEVICES; OVERCURRENT PROTECTION; RESISTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SENSORS; SHORT CIRCUIT CURRENTS; SWITCHING;

INDUCTIVE LOAD CIRCUIT; MONOLITHIC OVERCURRENT PROTECTION CIRCUIT; PHOTOMASK; POLYCRYSTALLINE SILICON DIODE; TURN OFF LOSS; VOLTAGE DROP;

BIPOLAR TRANSISTORS;

EID: 0028698272     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)