Electrostatic discharge failure analysis of capacitive RF MEMS switches

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1818-1822

  Ruan, J ^a   Nolhier, N ^a   Bafleur, M ^a   Bary, L ^a   Coccetti, F ^a   Lisec, T ^b   Plana, R ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b FRAUNHOFER INSTITUTE FOR SILICON TECHNOLOGY ISIT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COULOMB INTERACTIONS; ELECTRIC DISCHARGES; ELECTRIC LINES; FAILURE ANALYSIS; SWITCHING SYSTEMS;

CAPACITIVE CONTACT; ELECTROSTATIC DISCHARGE (ESD); TRANSMISSION LINE PULSING (TLP);

MEMS;

EID: 34548667702     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.070     Document Type: Article

References (7)

1. Zunino JL III et al. Micro-electromechanical systems (MEMS) reliability assessment program for department of defense activities. In: Proceedings of 2005 NSTI nanotechnology conference and trade show (Nanotech), Anaheim, CA, vol. 3, May 8-12 2005. p. 463-66.
2. Tazzoli A, Peretti V, Gaddi R, Gnudi A, Zanoni E, Meneghesso G. Reliability issues in RF-MEMS switches submitted to cycling and ESD test. In: 44th annual international reliability physics symposium, San Jose; 2006. p. 410-15.
3. Hanwa Electronic Ltd.: .
4. Mellé S., et al. Reliability modeling of capacitive RF MEMS. IEEE Trans Microw Theory 53 11 (2005) 3482-3488
5. Ducarouge B, Dubuc D, Mellé S, Grenier K, Mazenq L, Bary L. Efficient topology and design methodology for RF MEMS switches. In: SPIE's international symposium on microtechnologies for the new millennium 2005, Seville (Spain), vols. 5836-5840, 9-11 May 2005. p. 535-39.
6. Lisec T, Huth C, Wagner B. Dielectric material impact on capacitive RF MEMS reliability. In: 34th European microwave conference, Amsterdam; 2004.
7. Maloney TJ, Khurana N. Transmission line pulsing techniques for circuit modeling of ESD phenomena. In: Proceedings of EOS/ESD Symposium; 1985. p. 49-54.