Effect of acceptor (Mg) concentration on the electrical resistance at room and high (200 °C) temperatures of acceptor (Mg)-doped BaTiO3 ceramics

Journal of Applied Physics

Volumn 102, Issue 5, 2007, Pages

  Yoon, Seok Hyun ^a   Hong, Min Hee ^a   Hong, Jeong Oh ^a   Kim, Young Tae ^a   Hur, Kang Heon ^a  

^a Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; GRAIN BOUNDARIES; OXYGEN VACANCIES; PARTIAL PRESSURE; SINTERING;

CRITICAL ACCEPTOR CONCENTRATIONS; OXYGEN PARTIAL PRESSURES; ROOM TEMPERATURE;

BARIUM TITANATE;

EID: 34548659569     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2777119     Document Type: Article

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