Photovoltaic and photoconductivity effect in thin-film phototransistors based on a heterocyclic spiro-type molecule

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Saragi, Tobat P I ^a   Londenberg, Joscha ^a   Salbeck, Josef ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DARK CURRENTS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTOVOLTAIC EFFECTS; THIN FILMS;

FIELD EFFECT MOBILITY; TRANSFER CURVES;

PHOTOTRANSISTORS;

EID: 34548413293     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2770828     Document Type: Article

References (19)

1. S. R. Forrest, Nature 0028-0836 10.1038/nature02498 428, 911 (2004).
2. Y. Y. Noh, D. Y. Kim, and K. Yase, J. Appl. Phys. 0021-8979 10.1063/1.2061892 98, 074505 (2005).
3. Y. Y. Noh, J. Ghim, S. J. Kang, K. J. Baeg, D. Y. Kim, and K. Yase, J. Appl. Phys. 100, 094501 (2006). 0021-8979
4. Y. Y. Noh, D. Y. Kim, Y. Yoshida, K. Yase, B. J. Jung, E. Lim, and H. K. Shim, Appl. Phys. Lett. 0003-6951 10.1063/1.1856144 86, 043501 (2005).
5. T. P. I. Saragi, R. Pudzich, T. Fuhrmann, and J. Salbeck, Appl. Phys. Lett. 0003-6951 10.1063/1.1690110 84, 2334 (2004).
6. T. P. I. Saragi, K. Onken, I. Suske, T. Fuhrmann-Lieker, and J. Salbeck, Opt. Mater. 0925-3467 10.1016/j.optmat.2006.07.001 29, 1332 (2007).
7. T. P. I. Saragi, R. Pudzich, T. Fuhrmann-Lieker, and J. Salbeck, Opt. Mater. 0925-3467 10.1016/j.optmat.2006.01.013 29, 879 (2007).
8. T. P. I. Saragi, R. Pudzich, T. Fuhrmann-Lieker, and J. Salbeck, Appl. Phys. Lett. 0003-6951 10.1063/1.2720743 90, 143514 (2007).
9. T. P. I. Saragi, M. Fetten, and J. Salbeck, Appl. Phys. Lett. 0003-6951 10.1063/1.2750387 90, 253506 (2007).
10. K. S. Narayan and N. Kumar, Appl. Phys. Lett. 0003-6951 10.1063/1.1404131 79, 1891 (2001).
11. N. Marjanovic, B. Singh, G. Dennler, S. Guenes, H. Neugebauer, N. S. Sariciftci, R. Schwödiauer, and S. Bauer, Org. Electron. 1566-1199 10.1016/j.orgel.2006.01.002 7, 188 (2006).
12. M. C. Hamilton, S. Martin, and J. Kanicki, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2004.829619 51, 877 (2004).
13. Y. Xu, P. R. Berger, J. N. Wilson, and U. H. F. Bunz, Appl. Phys. Lett. 0003-6951 10.1063/1.1812834 85, 4219 (2004).
14. T. P. I. Saragi and J. Salbeck, Appl. Phys. Lett. 0003-6951 10.1063/1.2423248 89, 253516 (2006).
15. G. Gu, M. G. Kane, J. E. Doty, and A. H. Firester, Appl. Phys. Lett. 0003-6951 10.1063/1.2146059 87, 243512 (2005).
16. Y. Takanashi, K. Takahata, and Y. Muramoto, IEEE Trans. Electron Devices 0018-9383 10.1109/16.808049 46, 2271 (1999).
17. H. S. Kang, C. S. Choi, W. Y. Choi, D. H. Kim, and K. S. Seo, Appl. Phys. Lett. 0003-6951 10.1063/1.1739278 84, 3780 (2004).
18. C. S. Choi, H. S. Kang, W. Y. Choi, H. J. Kim, W. J. Choi, D. H. Kim, K. C. Jang, and K. S. Seo, IEEE Photon. Technol. Lett. 1041-1135 10.1109/LPT.2003.811339 15, 846 (2003).
19. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 2007), p. 669.