Determination of elastic stiffness coefficients of Si-doped free-standing gallium-nitride single crystals by brillouin scattering

Journal of the Korean Physical Society

Volumn 51, Issue 2 PART I, 2007, Pages 776-778

  Ko, Jae Hyeon ^a   Hwang, Yoon Hwae ^b   Kojima, Seiji ^c   Han, Jai Yong ^d   Lee, Hae Yong ^e  

^a Hallym University   (South Korea)

^b Pusan National University   (South Korea)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^e Samsung Corning Co Ltd   (South Korea)

Author keywords

Brillouin scattering; Elastic stiffness coefficient; Gallium nitride; GaN

Indexed keywords

EID: 34548336864     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.51.776     Document Type: Article

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