Defect structure of silicon crystals implanted with H 2 + ions

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 8, 2007, Pages 2638-2644

  Shalimov, Artem ^a   Shcherbachev, Kirill D ^b   Bak Misiuk, Jadwiga ^a   Misiuk, Andrzej ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^c Research Group of Integrated Circuits and System Design   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT CLUSTERS; DIFFUSE SCATTERING; DILATATION;

DEFECT STRUCTURES; HYDROGEN; HYDROSTATIC PRESSURE; ION IMPLANTATION; POSITIVE IONS; SILICON; X RAY SCATTERING;

CRYSTALS;

EID: 34548287943     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200675697     Document Type: Article

References (7)

1. J. Bak-Misiuk, I. V. Antonova, A. Misiuk, J. Domagala, V. P. Popov, V. I. Obodnikov, J. Haertwig, A. RomanoRodriguez, and A. Bachrouri, J. Alloys Compd. 328, 181 (2001).
2. B. C. Larson, J. Appl. Crystallogr. 8, 150 (1975).
3. V. T. Bublik, S. Yu. Matsnev, K. D. Shcherbachev, M. V. Mezhennyi, M. G. Mil'divskii, and V. Ya. Reznik, Phys. Solid State 45(10), 1918 (2003).
4. J. Yamasaki, Y. Ohno, S. Takeda, and Y. Kimura, Philos. Mag. 83(2), 151 (2003).
5. K. D. Chtcherbatchev, V. T. Bublik, A. S. Markevich V. N. Mordkovich, E. Alves, N. P. Barradas, and A. D. Sequeira, J. Phys. D, Appl. Phys. 36, A143 (2003).
6. M. Bruel, Nucl. Instrum. Methods Phys. Res. B 108, 313 (1996).
7. J. Bak-Misiuk, A. Misiuk, A. Shalimov, V. G. Zavodinsky, A. A. Gnidenko, B. Surma, I. V. Antonova, A. Wnuk, J. Ratajczak, J. Trela, and V. P. Popov, J. Alloys Compd. 382, 160 (2004).