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Volumn 36, Issue 10 A, 2003, Pages

The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ARGON; GALLIUM COMPOUNDS; ION BEAMS; ION IMPLANTATION; POINT DEFECTS; POSITIVE IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; X RAY DIFFRACTION ANALYSIS;

EID: 0038621871     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/10A/329     Document Type: Article
Times cited : (9)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.