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Volumn 36, Issue 10 A, 2003, Pages
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The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHIZATION;
ARGON;
GALLIUM COMPOUNDS;
ION BEAMS;
ION IMPLANTATION;
POINT DEFECTS;
POSITIVE IONS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SILICON WAFERS;
X RAY DIFFRACTION ANALYSIS;
GALLIUM ARSENIDE CRYSTAL;
HIGH-RESOLUTION X-RAY DIFFRACTION;
ION CURRENT;
PHOTOEXCITATION;
RADIATION-INDUCED POINT DEFECT;
CRYSTAL STRUCTURE;
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EID: 0038621871
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/36/10A/329 Document Type: Article |
Times cited : (9)
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References (16)
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