Radiation-induced structural transformations in a silicon layer of SOI

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 8, 2007, Pages 2645-2650

  Shcherbachev, K D ^a   Bublik, V T ^a   Mordkovich, V N ^b   Pazhin, D M ^b   Alves, E ^c   Barradas, N P ^c  

^a NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE DEPTH PROFILES; SILICON LAYERS; STRUCTURAL TRANSFORMATIONS;

CONCENTRATION (PROCESS); GENETIC ALGORITHMS; HELIUM; POSITIVE IONS; RADIATION EFFECTS; SILICON;

SILICON ON INSULATOR TECHNOLOGY;

EID: 34548273027     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200675698     Document Type: Article

References (16)

1. L. S. Smirnov (Ed.), Physical processes in irradiated semiconductors (Nauka, Novosibirsk, 1977), p. 254 (in Russian).
2. K. Gartner and A. Uguzzoni, Nucl. Instrum. Methods B 67, 189 (1992).
3. K. Gartner, Nucl. Instrum. Methods B 132, 147 (1997).
4. J. Lyndard and K. Dan Vid Selsk, Mat. Fys. Medd. 34, 14 (1965).
5. E. Bonderup et al., Radiat. Effects 12, 261 (1972).
6. K. D. Chtcherbatchev and V. T. Bublik, Inst. Phys. Conf. Ser. 160, 187 (1997).
7. C. R. Wie, T. A. Tombrello, and T. Vreeland, J. Appl. Phys. 59, 3743 (1986).
8. th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Grenoble and Aussois, France, 10-14 September 2002, p. 21.
9. K. D. Shcherbachev, A. V. Kuripjatnik, and V. T. Bublik, Ind. Lab. 69, 626 (2003).
10. M. A. Krivoglaz, X-ray and Neutron Diffraction in Non ideal Crystals (Naukova Dumka, Kiev, 1983), p. 407 (in Russian).
11. M. Servidory and R. Fabri, J. Phys. B, Appl. Phys. 26, A22 (1993).
12. R. D. Goldberg et al., Nucl. Instrum. Methods Phys. Res. B 106, 216 (1995).
13. J. Lee, M-H. Nam, J-H. Oh et al., Appl. Phys. Lett. 72(6), 677 (1998).
14. H. Boesch, T. Taylor et al., IEEE Trans. Nucl. Sci. 37, 1982 (1990).
15. G. D. Watkins, J. R. Troxell, and A. P. Chatterjee, in: Defects and Radiation Effects in Semiconductors, Inst. Phys. Conf. Ser. 46 (IOP, London-Bristol, 1979), pp. 16-30.
16. Z. Saralidze, Solid State Phys. 30, 1239 (1988).