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Volumn 42, Issue 9, 2007, Pages 1842-1849

Development of embedded three-dimensional 35-nF/mm2 MIM capacitor and BiCMOS circuits characterization

Author keywords

BiCMOS integrated circuits; Capacitors; Filters; Frequency synthesizers; MIM devices; Phase locked loops; Voltage controlled oscillators

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC FILTERS; PHASE LOCKED LOOPS; VARIABLE FREQUENCY OSCILLATORS;

EID: 34548269486     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2007.900787     Document Type: Conference Paper
Times cited : (4)

References (15)
  • 3
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    • Dielectric reliability and material properties of Al2O3 in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO2, SiN and Ta2O5
    • K. H. Allers, P. Brenner, and M. Schrenk, "Dielectric reliability and material properties of Al2O3 in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO2, SiN and Ta2O5," in Proc. BCTM, 2003, pp. 35-38.
    • (2003) Proc. BCTM , pp. 35-38
    • Allers, K.H.1    Brenner, P.2    Schrenk, M.3
  • 11
    • 0041510675 scopus 로고    scopus 로고
    • Knudsen self-and Fickian diffusion in rough nanoporous media
    • K. Malek and M. O. Coppens, "Knudsen self-and Fickian diffusion in rough nanoporous media," J. Chem. Phys., vol. 119, no. 5, pp. 2801-2811, 2003.
    • (2003) J. Chem. Phys , vol.119 , Issue.5 , pp. 2801-2811
    • Malek, K.1    Coppens, M.O.2
  • 12
    • 0036687390 scopus 로고    scopus 로고
    • Transient adsorption and desorption in micrometer scale features
    • M. J. Gobbert, S. G. Webster, and T. S. Cale, "Transient adsorption and desorption in micrometer scale features," J. The Electrochem. Soc., vol. 149, no. 8, pp. G461-G473, 2002.
    • (2002) J. The Electrochem. Soc , vol.149 , Issue.8
    • Gobbert, M.J.1    Webster, S.G.2    Cale, T.S.3
  • 13
    • 1042289135 scopus 로고    scopus 로고
    • BiCMOS7RF: A highly-manufacturable 0.25- μm BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy
    • H. Baudry, B. Szelag, F. Deleglise, M. Laurens, J. Mourier, F. Saguin, G. Troillard, A. Chantre, and A. Monroy, "BiCMOS7RF: A highly-manufacturable 0.25- μm BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy," in Proc. BCTM, 2003, pp. 207-210.
    • (2003) Proc. BCTM , pp. 207-210
    • Baudry, H.1    Szelag, B.2    Deleglise, F.3    Laurens, M.4    Mourier, J.5    Saguin, F.6    Troillard, G.7    Chantre, A.8    Monroy, A.9
  • 14
    • 0036117395 scopus 로고    scopus 로고
    • A CMOS differential noise-shifting Colpitts VCO
    • R. Aparicio and A. Hajimiri, "A CMOS differential noise-shifting Colpitts VCO," in IEEE ISSCC Dig. Tech. Papers, 2002, vol. 1, pp. 288-289.
    • (2002) IEEE ISSCC Dig. Tech. Papers , vol.1 , pp. 288-289
    • Aparicio, R.1    Hajimiri, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.