Piezoelectric unimorph miroactuators with X-shaped structure composed of PZT thin films

Microsystem Technologies

Volumn 13, Issue 8-10, 2007, Pages 825-829

  Kanno, Isaku ^a   Tazawa, Yoshiro ^a   Suzuki, Takaaki ^a   Kotera, Hidetoshi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT METHOD; MEMS; PIEZOELECTRIC MATERIALS; THIN FILMS;

BENDING MOTION; CONCAVE CURVATURE; LASER DOPPLER VIBROMETER; MULTILAYERED BEAM; X-SHAPED CONNECTOR;

ACTUATORS;

EID: 34548254832     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-006-0283-z     Document Type: Conference Paper

References (7)

1. Kanno I, Endo H, Kotera H (2003a) Low-voltage actuation of RF-MEMS switch using piezoelectric PZT thin films. Proc Microsyst Technol:714-716
2. Kanno I, Kotera H, Wasa K (2003b) Measurement of transverse piezoelectric properties of PZT thin films. Sens Actuators A 107:68-74
3. Lee H-C, Park J-Y (2005a) Piezoelectrically actuated RF MEMS DC contact switches with low voltage operation. IEEE MicroWirel Compon Lett 15(4):202-204
4. Lee H-C, Park J-H, Par J-Y, Nam H-j, Bu J-U (2005b) Design, fabrication and RF performances of two different types of piezoelectrically actuated ohmic MEMS switches. J Micromech Microeng 15:2098-2104
5. Rebeiz GM, Muldavin JB (2001) RF MEMS Switches and Switch Circuits. IEEE microwave mag 2(4):59-71
6. 3 thin films deposited on stainless steel substrates by RF-magnetron sputtering for MEMS applications. Sens Actuators A 125:382-386
7. Tazawa Y, Endo H, Suzuki T, Kanno I, Kotera H (2005) Piezoelectric microactuators using PZT thin films deposited by RF-sputtering. Proc IMFEDK:103-104