Role of dislocation scattering on the electron mobility of n-type long wave length infrared HgCdTe on silicon

Journal of Electronic Materials

Volumn 36, Issue 8, 2007, Pages 1098-1105

  Carmody, M ^a   Edwall, D ^a   Ellsworth, J ^a   Arias, J ^a   Groenert, M ^b   Jacobs, R ^b   Almeida, L A ^b   Dinan, J H ^b   Chen, Y ^c   Brill, G ^c   Dhar, N K ^c  

^a TELEDYNE SCIENTIFIC COMPANY   (United States)

^b US Army RDECOM CERDEC NVESD   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Dislocations; HgCdTe; MBE; Mobility

Indexed keywords

DISLOCATION DENSITY; DISLOCATION SCATTERING; LONG WAVE LENGTH INFRARED (LWIR);

ELECTRON MOBILITY; ELECTRON SCATTERING; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; SILICON;

MERCURY COMPOUNDS;

EID: 34548214227     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0182-9     Document Type: Conference Paper

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