III-V heterostructures in photovoltaics

Springer Series in Optical Sciences

Volumn 130, Issue , 2007, Pages 25-50

  Alferov, Zh I ^a   Andreev, V M ^a   Rumyantsev, V D ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34548146632     PISSN: 03424111     EISSN: 15561534     Source Type: Book Series    
DOI: 10.1007/978-3-540-68798-6_2     Document Type: Article

References (55)

1. W.G. Adams, R.E. Day. Philos Trans R Soc Lond 167, 313 (1877)
2. A.F. Ioffe, A.V. Ioffe. Phys Z Sowjetunion 7, 343 (1935)
3. D.M. Chapin, C.S. Fueller,G.L. Pearson. J Appl Phys 25, 676 (1954)
4. N.A. Goryunova, Dissertation, Leningrad State University, Physicotechnical Institute, Leningrad (1951)
5. W. Shockley. Circuit Element Utilizing Semiconductor Material. U.S. Patent 2269347, 25 September 1951
6. A.I. Gubanov. Theory of the contact between two semiconductors with different types of conduction. Zh Tekh Fiz 20, p. 1287 (1950)
7. H. Kroemer. Theory of a wide-gap emitter for transistors. Proc IRE 45, p. 1535 (1957)
8. Zh.I. Alferov,V.B. Khalfin, R.F. Kazarinov. A characteristic feature of injection into heterojunctions. Fiz Tverd Tela, 8, pp 3102-3105, 1966 [Sov Phys Solid State, 8, p. 2480, 1967]
9. R.L. Anderson. Gemanium-gallium arsenide heterojunctions. IBM J Res Dev 4, p. 283 (1960)
10. 1-xAs crystalls. Fiz Tekh Poluprovodn 1, pp. 1579-1581, 1967 [Sov Phys Semicond 1, pp. 1313-1314, 1968]
11. xAs p-n junctions grown by liquid-phase epitaxy. Appl Phys Lett 11, p. 81 (1967)
12. 1-xAs-p-GaAs heterojunctions. Fiz Tekh Poluprovodn 2, pp. 1016-1017 (1968) [Sov Phys Semicond 2, pp. 843-844, 1969]
13. Zh.I. Alferov, V.M. Andreev, V.I. Korol'kov, E.L. Portnoy, D.N. Tret'yakov. Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system. Fiz Tekh Poluprovodn 2, pp. 1545-1547 (1968) [Sov Phys Semicond 2, pp. 1289-1291, 1969]
14. Zh.I. Alferov, V.M. Andreev, V.I. Korol'kov, E.L. Portnoi, D.N. Tret'yakov. Recombination radiation in epitaxial structures in the AlAs-GaAs system. In Proc IX Int Conf on the Physics of Semiconductors, Moscow, 1968, 1 ("Nauka", Leningrad, 1968), pp. 504-510
15. Zh.I. Alferov,V.M. Andreev, E.L. Portnoy, M.K. Trukan. AlAs-GaAs heterojunctions injection lasers with a low room-temperature threshold. Fiz Tekh Poluprovodn 3, pp. 1328-1332 (1969)[Sov Phys Semicond 3, pp.1107-1110, 1970]
16. I. Hayashi. Heterostructure lasers. IEEE Trans Electron Devices, ED-31, pp. 1630-1645 (1984)
17. Zh.I. Alferov,V.M. Andreev, D.Z. Garbuzov,Yu.V. Zhilyaev, E.P. Morozov, E.L. Portnoi, V.G. Trofim. Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and the realization of continuous emission at the room temperature. Fiz Tekh Poluprovodn 4, pp. 1826-1829 (1970) [Sov Phys Semicond 4, pp. 1573-1575, 1971]
18. I. Hayashi, M.B. Panish, P.W. Foy, S. Sumski. Junction lasers which operate continuously at room temperature. Appl Phys Lett 17, pp. 109-111 (1970)
19. Zh.I. Alferov, V.M. Andreev, V.I. Korol'kov, E.L. Portnoi, A.A. Yakovenko. Spontaneous radiation sources based on structures with AlAs-GaAs heterojunctions. Fiz Tekh Poluprovodn 3, pp. 930-933 (1969) [Sov Phys Semicond 3, pp. 785-787, 1970]
20. xAs-GaAs heterojunctions. Fiz Tekh Poluprovodn 4, pp. 2378-2379, (1970) [Sov Phys Semicond 4, pp. 2047-2048, 1971]
21. Zh.I. Alferov, F.A. Ahmedov, V.I. Korol'kov, V.G. Nikitin. Phototransistor utilizing a GaAs-AlAs heterojunction. Fiz Tekn Poluprovodn 7, pp. 1159-1163 (1973) [Sov Phys Semicond 7, pp. 780-782, 1973]
22. xAs solid solutions. Fiz Tekn Poluprovodn 4, pp. 578-581 (1970) [Sov Phys Semicond 4, pp. 481-483, 1971]
23. Zh.I. Alferov, V.M. Andreev, S.G. Konnikov, V.G. Nikitin, D.N. Tret'yakov. Heterojunctions on the base of III-V semiconducting and of their solid solutions. In: Proc Int Conf Phys Chem Semicond Heterojunctions and Layer Structures, Budapest, 1970, 1. Ed. G. Szigeti (Academiai Kiado, Budapest, 1971), pp. 93-106
24. G.A. Antipas, R.L. Moon, L.W. James, J. Edgecumbe, R.L. Bell. In: Gallium arsenide and related compounds. Conf Ser IOP, 17, p. 48 (1973)
25. 1-y. Kvantovaya Electron 1, p. 2294 (1974) [Sov J Quantum Electron, 1, p. 1281, 1974]
26. 0.5P. Pisma Zh Tech Fiz 1, pp. 305-310 (1975) [Sov Phys Tech Phys Lett 1, pp. 147-148, 1975]
27. L.W. James, R.L. Moon. GaAs concentrator solar cells. Appl Phys Lett 26, pp. 467-470 (1975)
28. Zh.I. Alferov, V.M. Andreev, Kh.K. Aripov, V.R. Larionov, V.D. Rumyantsev. Solar photovoltaic installation with output power of 200 W based on AlGaAsheterophotocells and mirror concentrators. Geliotekhnika 6, p. 3 (1981)
29. V.M. Andreev, V.A. Grilikhes, V.D. Rumyantsev. Photovoltaic conversion of concentrated sunlight. Wiley, Chichester (1997)
30. Zh.I. Alferov, V.M. Andreev, D.Z. Garbuzov, V.R. Larionov, V.D. Rumyantsev, V.B. Khalfin. Heterophotocells with intermediate conversion of radiation. Fiz Tekh Poluprovodn 11, pp. 1765-1770 (1977) [Sov Phys Semicond 11, 1977]
31. I.N. Arsent'ev, D.Z. Garbuzov, V.D. Rumyantsev. Internal quantum efficiency of radiative recombination in heterostructures based on wide-gap InGaAsP solid alloys. Proc Second All-USSR Conference on Physical Processed in Semiconductor Heterostructures, vol. II, pp. 107-109, Ashkhabad, 1978 (in Russian)
32. E.V. Tulashvili, L.S. Vavilova, D.Z. Garbuzov, I.N. Arsent'ev, V.B. Khalfin. Influence of recombination in emitters on photoluminescence characteristics of the double heterostructures In0.5Ga0.5P-InGaAsP. Fiz Tekh Poluprovodn 16, pp. 1645-1649 (1982) [Sov Phys Semicond 16, 1982]
33. Zh.I. Alferov, V.M. Andreev, D.Z. Garbuzov, V.D. Rumyantsev. 100% internal quantum efficiency of radiative recombination in light-emitting diodes based on AlAs-GaAs. Fiz Tekh Poluprovodn 9, pp. 462-469 (1975) [Sov Phys Semicond 9, 1975]
34. Zh.I. Alferov, V.G. Agafonov, D.Z. Garbuzov, N.Yu. Davidyuk, V.R. Larionov, V.B. Khalfin. Multipass heterostructures. External quantum efficiency of radiation. Fiz Tekh Poluprovodn 10, pp. 1497-1506 (1976) [Sov Phys Semicond 10, 1976]
35. N.Yu. Antonishkis, I.N. Arsent'ev, D.Z. Garbuzov, V.P. Evtichiev, V.V. Krasovskii, A.V. Chudinov, A.E. Svelokuzov. Efficiency of the luminescence and interface recombination velocity in heterostructures based on Al-Ga-As and In-Ga-As-P systems. Fiz Tekh Poluprovodn 20, pp. 708-712 (1986)[Sov Phys Semicond 20, 1986]
36. M.A. Green. Third generation photovoltaics: Ultrahigh conversion efficiency at low cost. Progr Photovoltaics Res Appl 9, pp. 123-135 (2001)
37. K. Lin, K.R. Catchpole, T. Trupke, P. Campbell, M. Green, A.G. Aberle,R. Corkish, A.W. Bett, F. Dimroth. High external quantum efficiency from double heterostructures layers as selective emitters in thermophotonic systems. Proc 3rd World Conference on Photovoltaic Energy Conversion, Osaka, 2003
38. V.M. Andreev, B.V. Egorov, V.M. Lantratov, V.D. Rumyantsev, S.I. Troshkov. Solar heterophotocells with increased p-n junction depth. Sov Phys Techn Phys 28 (8), pp. 1022-1023 (1984)
39. M.E. Green, K. Emery, D.L. King, S. Igari, W. Warta. Solar cell efficiency tables (version 20). Prog Photovoltaics Res Appl 10, 355 (2002)
40. V.M. Andreev, A.B. Kazantsev, V.P. Khvostikov, E.V. Paleeva, V.D. Rumyantsev, M.Z. Shvarts. High-efficiency (24.6%, AM0) LPE grown AlGaAs/ GaAs concentrator solar cells and modules. Proc 1st World Conference on Photovoltaic Energy Conversion, Hawaii, 1994, pp. 2096-2099
41. S.G. Balei, D.J. Flood. Space photovoltaics. Progr Photovoltaics Res Appl 6, pp. 1-14 (1998)
42. C. Algora, E. Ortiz, I. Rey-Stolle, V. Diaz, P. Pena, V.M. Andreev, V.P. Khvostikov, V.D. Rumyantsev. A GaAs solar cell with efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns.IEEE Trans Electron Dev 48 (5), pp. 840-844 (2001)
43. V.M. Andreev, V.P. Khvostikov, V.R. Larionov, V.D. Rumyantsev, E.V. Paleeva, M.Z. Shvarts, C. Algora. 5800 Suns AlGaAs/GaAs concentrator solar cells. Technical Digest of the International Photovoltaic Science and Engineering Conference, Sapporo, Japan, 1999, pp. 147-148
44. M.Z. Shvarts, O.I. Chosta, I.V. Kochnev, V.M. Lantratov, V.M. Andreev. Radiation resistant AlGaAs/GaAs concentrator solar cells with internal Bragg reflector. Solar Energy Mater Solar Cells 68, pp. 105-122 (2001)
45. K.A. Bertness, S.R. Kurtz, D.J. Friedman, A.E. Kibber, C. Kramer, J.M. Olson. High efficiency GaInP/GaAs tandem solar cells for space and terrestrial applications. Proc 1st World Conference on Photovoltaic Energy Conversion, Hawaii, 1994, pp. 1671-1678
46. R.R. King, D.C. Law, C.M. Fetzer, R.A. Sherif, K.M. Edmondson, S. Kurtz, G.S. Kinsey, H.L. Cotal, D.D. Krut, J.H. Ermer, N.H. Karam. Pathways to 40%-efficient concentration photovoltaics. Proc 20th European PVSEC, Barcelona, Spain, 2005, pp. 6-10
47. M. Green, K. Emery, D. King, Y. Hisikawa, W. Warta. Solar cell efficiency tables (version 27). Prog Photovoltaics 14, p. 45 (2006)
48. V.M. Andreev, L.B. Karlina, A.B. Kazantsev, V.P. Khvostkov, V.D. Rumyantsev, S.V. Sorokina, M.Z. Shvarts. Concentrator tandem solar cells based on AlGaAs/GaAs-InP/InGaAs (or GaSb) structures. Proc 1st World Conference on Photovoltaic Energy Conversion, Hawaii, 1994, pp. 1721-1724
49. M.Z. Shvarts, P.Y. Gazaryan, V.P. Khvostikov, V.M. Lantratov, N.K. Timoshina. InGaP/GaAs-GaSb and InGaP/GaAs/Ge-InGaAsSb hybrid monolithic/ stacked tandem concentrator solar cells. Proc 21st European Photovoltaic Solar Energy Conference, Dresden, 2006
50. Zh.I. Alferov, N.A. Bert, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, A.O. Kosogov, I.L. Krestnikov, N.N. Ledentsov, A.V. Lunev, M.V. Maksimov, A.V. Sakharov, V.M. Ustinov, A.F. Tsatsul'nikov, Yu.M. Shernyakov, D. Bimberg. An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix. Fiz Tekh Poluprovodn 30, pp. 351-356 (1996) [Semiconductors 30, pp 194-196, 1996]
51. A. Marti, L. Guadra, A. Luque. Intermediate-band solar cells. In: Next generation photovoltaics. High efficiency through full spectrum utilization. A. Marti, A. Luque (Eds). Institute of Physics Publishing, pp. 140-164 (2004)
52. P.A. Davies, A. Luque. Solar thermophotovoltaics: Brief review and a new look. Solar Energy Mater Solar Cells 33, pp. 11-22 (1994)
53. V.M. Andreev, V.A. Grilikhes, V.P. Khvostikov, O.A. Khvostikova, V.D. Rumyantsev, N.A. Sadchikov, M.Z. Shvarts. Concentrator PV modules and solar cells for TPV systems. J Solar Energy Mater Solar Cells 84, pp. 3-17 (2004)
54. 1-xAs graded band-gap heterostructures. Pisma Zh Tech Fiz 4, pp. 369-372 (1978 [Sov Tech Phys Lett 4 (4), 149-150, 1978]
55. 2,T = 300 K) with quantum well restriction by short period superlattice of variable period. Pisma Zh Techn Fiz 14, 1803-1806 (1988) [Sov Tech Phys Lett 14, 782, 1988]