-
1
-
-
0000001543
-
Evidence of refrigerating action by means of photon emission in semiconductor diodes
-
G.C. Dousmanis, C. W. Muller, H. Nelson, and K. G. Petzinger, "Evidence of Refrigerating Action by means of Photon Emission in Semiconductor Diodes", Physical Review, 133, No 1A, pp A316 -A318. (1964)
-
(1964)
Physical Review
, vol.133
, Issue.1 A
-
-
Dousmanis, G.C.1
Muller, C.W.2
Nelson, H.3
Petzinger, K.G.4
-
2
-
-
0003503144
-
-
(Advanced Solar Conversion). Centre for Photovoltaic Engineering, UNSW, Sydney
-
M.A. Green, Third generation photovoltaics (Advanced Solar Conversion). Centre for Photovoltaic Engineering, UNSW, Sydney. (2001)
-
(2001)
Third Generation Photovoltaics
-
-
Green, M.A.1
-
3
-
-
36549092991
-
Van der Waals bonding of GaAs epitaxial lift-off films onto arbitrary substrates
-
E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, "Van der Waals bonding of GaAs epitaxial lift-off films onto arbitrary substrates", Appl. Phys. Lett. 56, Issue 24, pp. 2419-2421 (1990)
-
(1990)
Appl. Phys. Lett.
, vol.56
, Issue.24
, pp. 2419-2421
-
-
Yablonovitch, E.1
Hwang, D.M.2
Gmitter, T.J.3
Florez, L.T.4
Harbison, J.P.5
-
4
-
-
0027617736
-
Epitaxial lift-off and its applications
-
P Demeester, I Pollentier, P De Dobbelaere, C Brys and P Van Daele, "Epitaxial lift-off and its applications",. Semicond. Sci. Technol. 8, p1124-1135 (1993)
-
(1993)
Semicond. Sci. Technol.
, vol.8
, pp. 1124-1135
-
-
Demeester, P.1
Pollentier, I.2
De Dobbelaere, P.3
Brys, C.4
Van Daele, P.5
-
5
-
-
36449003753
-
Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
-
I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, "Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures", Appl. Phys. Lett. 62, Issue 2, pp. 131-133 (1993)
-
(1993)
Appl. Phys. Lett.
, vol.62
, Issue.2
, pp. 131-133
-
-
Schnitzer, I.1
Yablonovitch, E.2
Caneau, C.3
Gmitter, T.J.4
-
6
-
-
0031070083
-
External radiative quantum efficiency of 96% from a GaAs / GaInP heterostrucrure
-
Gauck, H.; Gfroerer, T. H.; Renn, M. J.; Cornell, E. A.; Bertness, K. A., "External radiative quantum efficiency of 96% from a GaAs / GaInP heterostrucrure", Appl. Phys. 64, issue 2, pp. 143-147 (1997)
-
(1997)
Appl. Phys.
, vol.64
, Issue.2
, pp. 143-147
-
-
Gauck, H.1
Gfroerer, T.H.2
Renn, M.J.3
Cornell, E.A.4
Bertness, K.A.5
-
7
-
-
0034227811
-
40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography
-
Reiner Windisch, Barun Dutta, Maarten Kuijk, Alexander Knobloch, Stefan Meinlschmidt, Stefan Schoberth, Peter Kiesel, Gustaaf Borghs, Gottfried H. Döhler, and Paul Heremans, "40% Efficient Thin-Film Surface-Textured Light-Emitting Diodes by Optimization of Natural Lithography", IEEE, 47, NO. 7, pp. 1492-1498 (2000)
-
(2000)
IEEE
, vol.47
, Issue.7
, pp. 1492-1498
-
-
Windisch, R.1
Dutta, B.2
Kuijk, M.3
Knobloch, A.4
Meinlschmidt, S.5
Schoberth, S.6
Kiesel, P.7
Borghs, G.8
Döhler, G.H.9
Heremans, P.10
-
8
-
-
0036493218
-
Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes
-
Windisch, R.; Rooman, C.; Dutta, B.; et al. "Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes". IEEE Journal on Selected Topics in Quantum Electronics, 8, Issue 2, p248-255 (2002)
-
(2002)
IEEE Journal on Selected Topics in Quantum Electronics
, vol.8
, Issue.2
, pp. 248-255
-
-
Windisch, R.1
Rooman, C.2
Dutta, B.3
-
9
-
-
0012576649
-
Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector
-
T. H. Gfroerer, E. A. Cornell, and M. W. Wanlass, "Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector", J. of Appl. Phys., 84, pp. 5360-5362 (1998)
-
(1998)
J. of Appl. Phys.
, vol.84
, pp. 5360-5362
-
-
Gfroerer, T.H.1
Cornell, E.A.2
Wanlass, M.W.3
-
10
-
-
0000084735
-
Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructures
-
Asbeck P. "Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructures". J. Appl. Phys. 48, p820 (1997)
-
(1997)
J. Appl. Phys.
, vol.48
, pp. 820
-
-
Asbeck, P.1
-
12
-
-
0344160494
-
Interfacial recombination velocity in GaAlAs/GaAs heterostructures
-
Nelson RJ and Sobers RG, " Interfacial recombination velocity in GaAlAs/GaAs heterostructures" , Appl. Phys. Lett. 32, 761 (1978)
-
(1978)
Appl. Phys. Lett.
, vol.32
, pp. 761
-
-
Nelson, R.J.1
Sobers, R.G.2
-
13
-
-
0012028282
-
Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling
-
Ahrenkiel RK, D. J. Dunlavy, Brian Keyes, S. M. Vernon, T. M. Dixon, S. P. Tobin, K. L. Miller, and R. E. Hayes, "Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling", Appl. Phys. Lett. 55, 1088 (1989)
-
(1989)
Appl. Phys. Lett.
, vol.55
, pp. 1088
-
-
Ahrenkiel, R.K.1
Dunlavy, D.J.2
Keyes, B.3
Vernon, S.M.4
Dixon, T.M.5
Tobin, S.P.6
Miller, K.L.7
Hayes, R.E.8
|