-
1
-
-
0000514307
-
The P-T-X projection of the system CdTe
-
K. Peters, A. Wenzel, and P. Rudolph, "The P-T-X projection of the system CdTe," Cryst. Res. Tech., vol. 25, no. 10, pp. 1107-1116, 1990.
-
(1990)
Cryst. Res. Tech.
, vol.25
, Issue.10
, pp. 1107-1116
-
-
Peters, K.1
Wenzel, A.2
Rudolph, P.3
-
2
-
-
0022232124
-
Behavior of excess Te atoms in undoped p-type CdTe annealed under Te vapor pressures
-
K. Yokata, T. Yoshikawa, S. Katayama, S. Katayama, S. Ishihara, and I. Kimura, "Behavior of excess Te atoms in undoped p-type CdTe annealed under Te vapor pressures," Jpn. J. Appl. Phys. Lett., vol. 24, pp. 1672-1677, 1985.
-
(1985)
Jpn. J. Appl. Phys. Lett.
, vol.24
, pp. 1672-1677
-
-
Yokata, K.1
Yoshikawa, T.2
Katayama, S.3
Katayama, S.4
Ishihara, S.5
Kimura, I.6
-
3
-
-
0011495016
-
Properties of CdTe crystals grown by THM using Cd as the solvent
-
R. Triboulet, R. Legros, A. Heurtel, B. Sieber, G. Didier, and D. Imhoff, "Properties of CdTe crystals grown by THM using Cd as the solvent," J. Cryst. Growth, vol. 72, pp. 90-96, 1985.
-
(1985)
J. Cryst. Growth
, vol.72
, pp. 90-96
-
-
Triboulet, R.1
Legros, R.2
Heurtel, A.3
Sieber, B.4
Didier, G.5
Imhoff, D.6
-
4
-
-
0027188662
-
x Te crystals
-
x Te crystals," Mater. Sci. Eng., vol. B16, pp. 182-185, 1993.
-
(1993)
Mater. Sci. Eng.
, vol.B16
, pp. 182-185
-
-
Shen, J.1
Aidun, D.K.2
Regel, L.3
Wilcox, W.R.4
-
5
-
-
0026237328
-
Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement
-
R. Stibal, J. Windscheif, and W. Jantz, "Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement," Semicond. Sci. Technol., vol. 6, no. 10, pp. 995-1001, 1991.
-
(1991)
Semicond. Sci. Technol.
, vol.6
, Issue.10
, pp. 995-1001
-
-
Stibal, R.1
Windscheif, J.2
Jantz, W.3
-
6
-
-
0011399221
-
Annealing effects on defect levels of CdTe: Cl materials and the uniformity of the electrical properties
-
San Diego, CA, Nov. 19
-
M. Ayoub, M. Hage-Ali, J.M. Koebel, A. Zumbiehl, F. Klotz, and C. Rit et al., "Annealing effects on defect levels of CdTe: Cl materials and the uniformity of the electrical properties," in TNS, Nuclear Science Symposium, San Diego, CA, Nov. 19, 2001.
-
(2001)
TNS, Nuclear Science Symposium
-
-
Ayoub, M.1
Hage-Ali, M.2
Koebel, J.M.3
Zumbiehl, A.4
Klotz, F.5
Rit, C.6
-
7
-
-
0033897009
-
Compensation origins in II-IV CZT materials
-
A. Zumbiehl, S. Mergui, M. Ayoub, M. Hage Ali, A. Zerrai, and K. Cherkaoui et al., "Compensation origins in II-IV CZT materials," Mater. Sci. Eng., vol. B71, pp. 297-300, 2000.
-
(2000)
Mater. Sci. Eng.
, vol.B71
, pp. 297-300
-
-
Zumbiehl, A.1
Mergui, S.2
Ayoub, M.3
Hage Ali, M.4
Zerrai, A.5
Cherkaoui, K.6
-
8
-
-
0001349649
-
Modified compensation model of CdTe
-
M. Fiederle, C. Eiche, M. Salk, R. Schwarz, and K.W. Benz, "Modified compensation model of CdTe," J. Appl. Phys., vol. 84, no. 12, pp. 6689-6692, 1998.
-
(1998)
J. Appl. Phys.
, vol.84
, Issue.12
, pp. 6689-6692
-
-
Fiederle, M.1
Eiche, C.2
Salk, M.3
Schwarz, R.4
Benz, K.W.5
-
9
-
-
0028761984
-
Thermal field influence on the formation of the Te inclusion in CdTe grown by the travelling heater method
-
R. Schwarz and K.W. Benz, "Thermal field influence on the formation of the Te inclusion in CdTe grown by the travelling heater method," J. Cryst. Growth, vol. 144, pp. 150-156, 1994.
-
(1994)
J. Cryst. Growth
, vol.144
, pp. 150-156
-
-
Schwarz, R.1
Benz, K.W.2
-
10
-
-
0011495017
-
The mechanism of inclusion formation during crystal growth by the travelling heater method
-
R.U. Barz and P. Gille, "The mechanism of inclusion formation during crystal growth by the travelling heater method," J. Cryst. Growth, vol. 149, pp. 196-200, 1995.
-
(1995)
J. Cryst. Growth
, vol.149
, pp. 196-200
-
-
Barz, R.U.1
Gille, P.2
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