Phase change characteristics of aluminum doped Ge2Sb 2Te5 films prepared by magnetron A sputtering

Optics Express

Volumn 15, Issue 17, 2007, Pages 10584-10590

  Wei, Shenjin ^a   Li, Jing ^a   Wu, Xia ^a   Zhou, Peng ^a   Wang, Songyou ^a   Zheng, Yuxiang ^a   Chen, Liangyao ^a   Gan, Fuxi ^a   Zhang, Xia ^b   Li, Guohua ^b  

^a FUDAN UNIVERSITY   (China)

^b QUFU NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DOPING (ADDITIVES); GERMANIUM COMPOUNDS; MAGNETRON SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE TEMPERATURES; FACE-CENTERED-CUBIC PHASE; PHASE CHANGE CHARACTERISTICS;

THIN FILMS;

EID: 34548075065     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.010584     Document Type: Article

References (14)

1. S. R. Ovshinsky, "Reversible Electrical Switching Phenomena in Disordered Structures," Phys. Rev. Lett. 21, 1450-1453 (1968).
2. J. Li, F. X. Gan, Z. T. Gu, Q. Xie, H. Ruan, P. H. Liang, "Determination of optical parameters of GeTe semiconductor films after thermal treatment," Opt. Mat. 14, 337-343 (2000).
3. F. X. Gan, L.S. Hou, G. B. Wang, H. Y. Liu, J. Li, "Optical and recording properties of short wavelength optical storage materials," Mat. Sci. and Eng. B 76, 63-68 (2000).
4. 3 phase-change optical, recording media," SPIE 3401, 259-262 (1998).
5. 3 thin films," Jpn. J. Appl. Phys. 39, 745-751 (2000).
6. 3 films studied by in situ resistance measurements," Appl. Phys. Lett. 85, 3044-3046 (2004).
7. D. Dimitrov, H. P. D. Shieh, "The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties," Mat. Sci. and Eng. B 107, 107-112 (2004).
8. L. Q. Men, J. Tominaga, H. Fuji, N. Atoda, "Oxygen doping effects on super-resolution scattering-mode near-field optical data storage," Jpn. J. Appl. Phys. 39, 2639-2642 (2000).
9. L. Q. Men, J. Tominaga, H. Fuji, T. Kikukawa, N. Atoda, "The effects of metal-doped GeSbTe films on light scattering- mode super-resolution near-field structure (super-RENS)," Jpn. J. Appl. Phys. 40, 1629-1633 (2001).
10. 3 thin film doped with silver," Jpn. J. Appl. Phys. 42, 1026-1028 (2003).
11. 3," Physica Status Solidi A 201, 3087-3095 (2004).
12. W. D. Song, L. P. Shi, X. S. Miao, T. C. Chong, "Phase change behaviors of Sn-doped Ge-Sb-Te material," Appl. Phys. Lett. 90, 091904/1-091904/3 (2007).
13. x(x = 0-2) films," Jpn. J. Appl. Phys 38, 6369-6371 (1999).
14. A type of sputtering deposition machine was manufactured by the Leybold Optics Dresden GmbH in Germany.