Selectable resistance-area product by dilute highly charged ion irradiation

Applied Physics Letters

Volumn 91, Issue 7, 2007, Pages

  Pomeroy, J M ^a   Grube, H ^a   Perrella, A C ^a   Gillaspy, J D ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; SENSORS; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTION; RESISTANCE-AREA (RA);

ION BOMBARDMENT;

EID: 34548047239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2768894     Document Type: Article

References (8)

1. Y. Nagamine, H. Maehara, K. Tsunekawa, D. D. Djayaprawira, N. Watanabe, S. Yuasa, and K. Ando, Appl. Phys. Lett. 89, 162507 (2006).
2. R. Ferreira, P. P. Freitas, M. MacKenzie, and J. N. Chapman, Appl. Phys. Lett. 86, 192502 (2005).
3. G. Hayderer, S. Cernusca, M. Schmid, P. Varga, H. P. Winter, F. Aumayr, D. Niemann, V. Hoffmann, N. Stolterfoht, C. Lemell, L. Wirtz, and J. Burgdorfer, Phys. Rev. Lett. 86, 3530 (2001).
4. L. P. Ratliff, E. W. Bell, D. C. Parks, A. I. Pikin, and J. D. Gillaspy, Rev. Sci. Instrum. 68, 1998 (1997).
5. J. M. Pomeroy, H. Grube, and A. C. Perrella, Radiat. Eff. Defects Solids (in press).
6. J. F. Ziegler and J. P. Biersack, SRIM 2006 (http://www.srim.org).
7. C. H. Shang, J. Nowak, R. Jansen, and J. S. Moodera, Phys. Rev. B 58, R2917 (1998).
8. Y. Xu, D. Ephron, and M. R. Beasley, Phys. Rev. B 52, 2843 (1995).