Analysis of low metallic contamination on silicon wafer surfaces by VPT-TXRF - Quantification of 109 atoms/cm2 level contamination

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Volumn , Issue , 2005, Pages 456-459

  Shimazaki, Ayako ^a   Ito, Shoko ^a   Miyazaki, Kunihiro ^a   Matsumura, Tsuyoshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORESCENCE; ONLINE SYSTEMS; SILICON WAFERS; VAPORS; X RAYS;

LOW METALLIC CONTAMINATION; ON-LINE MONITORING SYSTEMS;

CONTAMINATION;

EID: 28744451253     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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2. Y. Gohshi et al., Abstract of TXRF2003, Awaji, Japan, Sept. 2003, pp 84.
3. I. Matsumura, A. Shimazaki and S. Nadahara, "QTAT Monitoring in ULSI Manufacturing Line by VPD-TXRF," in Proceedings of the Conference ISSM2002, Sept. 2002.
4. K. Miyazaki and A. Shimazaki, Technical Report, the Institute of Electronics, Information and Communication Engineers (IEICE), 94 [39], 7 (1994).
5. Y. Mori et al., Proceedings of ECS, PV94-10, pp 258, (1994).
6. Y. Mori, K. Uemua, H. Kohno, M. Yamagami and Y. lizuka, "Sweeping-TXRF: A Nondestructive Technique for the Entire-Surface Characterization of Metal Contaminations on Semiconductor Wafers," in Proceedings of the Conference ISSM2004, Sept. 2004, pp 39-41.