Ambipolar field-effect transistors based on poly(3-hexylthiophene)/ Fullerene derivative bilayer films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 A, 2007, Pages 1736-1738

  Kaneto, Keiichi ^a   Yano, Makoto ^a   Shibao, Miho ^a   Morita, Takeomi ^a   Takashima, Wataru ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amblpolar transport; Bilayer film; FET; Fullerene derivatives; PCBM; Poly(3 hexylthlophene)

Indexed keywords

ELECTRONIC STRUCTURE; FULLERENES; HOLE MOBILITY; POLYMER FILMS; PRESSURE EFFECTS; SUBSTRATES;

AMBIPOLAR TRANSPORT; AMBLPOLAR TRANSPORT; BILAYER FILMS; FULLERENE DERIVATIVES;

FIELD EFFECT TRANSISTORS;

EID: 34547912966     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1736     Document Type: Article

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