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Volumn 56, Issue 4, 2007, Pages 1347-1354

Measurement technique for the static output characterization of high-current power MOSFETs

Author keywords

High current; Measurement uncertainty errors; Parasitic impedances; Power metal oxide semiconductor field effect transistors (MOSFETs); Self heating; Static output characteristics

Indexed keywords

ELECTRIC PARASITIC IMPEDANCE; STATIC OUTPUT CHARACTERISTIC; VOLTAGE RAMP;

EID: 34547903542     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIM.2007.900146     Document Type: Article
Times cited : (14)

References (7)
  • 1
    • 33947658550 scopus 로고    scopus 로고
    • Accurate behavioural modelling of power MOSFETs based on device measurements and FE-simulations
    • R. Elferich, T. López, and N. Koper, "Accurate behavioural modelling of power MOSFETs based on device measurements and FE-simulations," in Proc. IEEE EPE, 2005.
    • (2005) Proc. IEEE EPE
    • Elferich, R.1    López, T.2    Koper, N.3
  • 2
    • 0029291056 scopus 로고
    • Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating
    • Apr
    • K. A. Jenkins and J. Y. C. Sun, "Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating," IEEE Electron Device Lett., vol. 16, no. 4, pp. 145-147, Apr. 1995.
    • (1995) IEEE Electron Device Lett , vol.16 , Issue.4 , pp. 145-147
    • Jenkins, K.A.1    Sun, J.Y.C.2
  • 3
    • 0025139541 scopus 로고    scopus 로고
    • Characterisation of GaAs devices by versatile pulsed I-V measurement system
    • A. Platzker, A. Palevsky, S. Nash, W. Struble, and Y. Tajima, "Characterisation of GaAs devices by versatile pulsed I-V measurement system," in Proc. IEEE MTT-S, 1999, pp. 1137-1140.
    • (1999) Proc. IEEE MTT-S , pp. 1137-1140
    • Platzker, A.1    Palevsky, A.2    Nash, S.3    Struble, W.4    Tajima, Y.5
  • 4
    • 0029378081 scopus 로고
    • Method for determining correct timing for pulsed I/V measurement of GaAs FETs
    • Sep
    • A. Parker and J. Scott, "Method for determining correct timing for pulsed I/V measurement of GaAs FETs," Electron. Lett., vol. 31, no. 19, pp. 1697-1698, Sep. 1995.
    • (1995) Electron. Lett , vol.31 , Issue.19 , pp. 1697-1698
    • Parker, A.1    Scott, J.2
  • 5
    • 2342612875 scopus 로고    scopus 로고
    • PCB layout inductance modeling based on a time domain measurement approach
    • T. López, T. Dürbaum, T. Tolle, and R. Elferich, "PCB layout inductance modeling based on a time domain measurement approach," in Proc. IEEE APEC, 2004, pp. 1870-1876.
    • (2004) Proc. IEEE APEC , pp. 1870-1876
    • López, T.1    Dürbaum, T.2    Tolle, T.3    Elferich, R.4
  • 7
    • 4243782166 scopus 로고    scopus 로고
    • Thermal modeling of power-electronic systems
    • M. März and P. Nance, "Thermal modeling of power-electronic systems," PCIM Eur. Mag., vol. 2, pp. 20-27, 2000. http://www.iisb.fraunhofer.de/en/homepage.htm
    • (2000) PCIM Eur. Mag , vol.2 , pp. 20-27
    • März, M.1    Nance, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.