Effect of UV/ozone treatment on nanogap electrodes for molecular devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 A, 2007, Pages 1731-1733

  Goto, Touichiro ^a   Inokawa, Hiroshi ^b   Nagase, Masao ^a   Ono, Yukinori ^a   Sumitomo, Koji ^a   Torimitsu, Keiichi ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Coulomb blockade; Coulomb diamond; Molecular devices; Nanogap electrodes; Self assembled monolayers (SAMs); Single electron transistors; UV ozone cleaning

Indexed keywords

COULOMB BLOCKADE; ELECTROCHEMICAL ELECTRODES; ELECTRODEPOSITION; ELECTRON ENERGY LEVELS; OZONE; SELF ASSEMBLED MONOLAYERS;

COULOMB DIAMONDS; MOLECULAR DEVICES; NANOGAP ELECTRODES; SINGLE-ELECTRON TRANSISTORS;

MOLECULAR ELECTRONICS;

EID: 34547873240     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1731     Document Type: Article

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