Novel tunneling devices with multi-functionality

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2622-2625

  Choi, Woo Young ^a,b   Lee, Jong Duk ^a,b   Park, Byung Gook ^a,b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

MOSFET; Multi functionality; SJT; TFET; Tunneling device

Indexed keywords

DOPING (ADDITIVES); DRAIN CURRENT; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS;

MULTI-FUNCTIONALITY; N-CHANNEL SJT DEVICES; NEGATIVE DIFFERENTIAL CONDUCTANCE (NDC); SURFACE JUNCTION TUNNELING; TUNNELING FIELD-EFFECT TRANSISTOR (TFET);

ELECTRON TUNNELING;

EID: 34547857830     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2622     Document Type: Article

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