Local modification of electronic structure of Si (111) -7×7 surfaces by forming molybdenum-encapsulating Si clusters

Applied Physics Letters

Volumn 91, Issue 6, 2007, Pages

  Uchida, Noriyuki ^b   Yahata, Hiroshi ^b   Kanayama, Toshihiko ^b   Bolotov, Leonid ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRONIC STRUCTURE; MOLYBDENUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SILICON COMPOUNDS;

AB INITIO STRUCTURE CALCULATIONS; METALLIC ELECTRONIC STATE; SCANNING TUNNELING SPECTROSCOPY MEASUREMENTS; THERMAL ANNEALING;

SURFACE TREATMENT;

EID: 34547850685     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2767205     Document Type: Article

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