Single-wall carbon nanotube field effect transistors with non-volatile memory operation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 37-41, 2006, Pages

  Sakurai, Tatsuya ^a   Yoshimura, Takeshi ^a   Akita, Seiji ^a   Fujimura, Norifumi ^a   Nakayama, Yoshikazu ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

Ferroelectric thin films; Ferroelectric gate; Field effect transistors; Non volatile memory; Single wall carbon nanotubes

Indexed keywords

FERROELECTRIC THIN FILMS; FIELD EFFECT TRANSISTORS; NONVOLATILE STORAGE; SYNTHESIS (CHEMICAL);

FERROELECTRIC-GATE; NON-VOLATILE MEMORY;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 34547829452     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1036     Document Type: Article

References (9)

1. S. Iijima: Nature 354 (1991) 56.
2. S. J. Tans, A. R. M. Verschueren and C. Dekker: Nature 393 (1998) 49.
3. A. Javey, J. Guo, Q. Wang, M. Lundstrom and H. Dai: Nature 424 (2003) 654.
4. J. L. Moll and Y. Tarui: IEEE Trans. Electron Devices 10 (1963) 338.
5. H. Ishiwara: Jpn. J. Appl. Phys. 32 (1993) 442.
6. Y. Shichi, S. Tanimoto, T. Goto, K. Kuroiwa and Y. Tarui: Jpn. J. Appl. Phys. 33 (1994) 5172.
7. T. Hirai, Y. Fujisaki, K. Nagashima, H. Koike and Y. Tarui: Jpn. J. Appl. Phys. 36 (1997) 5908.
8. T. Miyasako, M. Senoo and E. Tokumitsu: Appl. Phys. Lett. 86 (2005) 162902.
9. S. Maruyama, R. Kojima, Y. Miyauchi, S. Chiashi and M. Kohno: Chem. Phys. Lett. 360 (2002) 229.