Ag/Cu layers grown on Si(111) substrates by thermal inducted chemical vapor deposition

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9015-9020

  Szymanska I B ^a   Piszczek, P ^a   Bala W ^a   Bartkiewicz, K ^a   Szlyk E ^a  

^a NICOLAUS COPERNICUS UNIVERSITY   (Poland)

Author keywords

Ag(I) precursor; Ag Cu layers; Chemical vapor deposition; Cu(I) precursor; Electrical properties; SEM

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; MORPHOLOGY; SILVER; SUBSTRATES;

DENSE-PACKED GRAIN; THERMAL INDUCTED CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON;

CHEMICAL VAPOR DEPOSITION; COPPER; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; MORPHOLOGY; SEMICONDUCTING SILICON; SILVER; SUBSTRATES;

EID: 34547676740     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.111     Document Type: Article

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