Influence of deposition parameters on hole mobility in polymorphous silicon

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7504-7507

  Brinza, M ^a   Adriaenssens, G J ^a   Abramov, A ^b   Roca i Cabarrocas, P ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Drift mobility; Polymorphous silicon; transient photoconductivity

Indexed keywords

HELIUM; HOLE MOBILITY; PHOTOCONDUCTIVITY; VALENCE BANDS;

DRIFT MOBILITY; HYDROGEN DILUTION; POLYMORPHOUS SILICON; TRANSIENT PHOTOCONDUCTIVITY;

SEMICONDUCTING SILICON;

EID: 34547601592     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.12.009     Document Type: Article

References (5)

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4. Brinza M., Adriaenssens G.J., and Roca i Cabarrocas P. Thin Solid Films 427 (2003) 123
5. Tiedje T. In: Pankove J. (Ed). Semiconductors and Semimetals vol. 21C (1984), Academic Press, NY