Thermal properties and thermoelectric microdevices with InN thin films

Microelectronics Journal

Volumn 38, Issue 6-7, 2007, Pages 667-671

  Izaki, Ryohei ^a   Hoshino, Masayuki ^a   Yaginuma, Tadashi ^a   Kaiwa, Nakaba ^a   Yamaguchi, Shigeo ^b   Yamamoto, Atsushi ^c  

^a KANAGAWA UNIVERSITY   (Japan)

^b High Tech Research Center   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

InN; Thermal diffusivity; Thermoelectric; Thermopower; Thin film

Indexed keywords

INDIUM COMPOUNDS; REACTIVE SPUTTERING; THERMAL DIFFUSIVITY; THERMOELECTRIC POWER;

GLASS SUBSTRATES; OPEN OUTPUT VOLTAGE; REACTIVE RADIO FREQUENCY (RF) SPUTTERING; THERMOELECTRIC POWER DEVICES;

THIN FILMS;

EID: 34547452804     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.05.005     Document Type: Article

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