Self-consistent calculation of facet heating in asymmetrically coated edge emitting diode lasers

Semiconductor Science and Technology

Volumn 13, Issue 3, 1998, Pages 265-276

  Menzel, U ^a  

^a MAX BORN INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2342565406     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/3/004     Document Type: Article

References (43)

1. Adams M J, Davies D A O, Tatham M C and Fisher M A 1995 Nonlinearities in semiconductor laser amplifiers Opt. Quantum Electron. 27 1-13
2. Sarzala R P and Nakwaski W 1994 Finite-element thermal model for buried-heterostructure diode lasers Opt. Quantum Electron. 26 87-95
3. Berger G, Muller R, Klehr A and Voss M 1995 Polarization bistability in strained ridge-waveguide InGaAsP/InP lasers: experiment and theory J. Appl. Phys. 77 6135-44
4. Ait-Sadi R, Lowery A J and Tuck B 1994 Two-dimensional temperature modelling of DH laser diodes using the transmission-line modelling (TLM) method IEE Proc. - Sci. Meas. Technol. 141 7-14
5. Spencer P S, Balasubramanyam R, Sarma J and Shore K A 1995 Self-consistent solution of the diffusion equation for an active optical semiconductor device Semicond. Sci. Technol. 10 942-7
6. 1-xAs double-heterostructure laser material J. Appl. Phys. 50 3721-32
7. Nakwaski W 1988 Three-dimensional time-dependent thermal model of catastrophic mirror damage in stripe-geometry double-heterostructure GaAs/(AlGa)As diode lasers Opt. Quantum Electron. 21 331-4
8. Yoo J S, Lee H H and Zory P 1992 Temperature rise at mirror facet of CW semiconductor lasers IEEE J. Quantum Electron. 28 635-9
9. Yoo J S, Fang S and Lee H H 1993 Condition for no thermal runaway in cw semiconductor lasers J. Appl. Phys. 74 6503-10
10. Lee H H 1993 Effects of lateral heat and carrier diffusion on thermal runaway of cw DH semiconductor lasers IEEE J. Quantum Electron. 29 2619-24
11. Higashi T, Ogita S, Soda H, Kobayashi H, Kurakake H, Aoki O and Okazaki N 1993 Optimum asymmetric mirror facet structure for high-efficiency semiconductor lasers IEEE J. Quantum Electron. 29 1918-22
12. Schatz R and Bethea CG 1994 Steady state model for facet heating leading to thermal runaway in semiconductor lasers J. Appl. Phys. 76 2509-21
13. Chen G and Tien CL 1993 Facet heating of quantum well lasers J. Appl. Phys. 74 2167-74
14. Hadley G R, Hohimer J P and Owyoung A 1988 Comprehensive modeling of diode arrays and broad-area devices with applications to lateral index tailoring IEEE J. Quantum Electron. 24 2138-52
15. Joyce W B and Dixon R W 1978 Electrical characterization of heterostructure lasers J. Appl. Phys. 49 3719-28
16. Agrawal G P and Dutta N K 1986 Long-Wavelength Semiconductor Lasers (New York: Van Nostrand Reinhold)
17. Dabkowski F P, Chin A K, Gavrilovic P, Alie S and Beyae D M 1994 Temperature profile along the cavity axis of high power quantum well lasers during operation Appl. Phys. Lett. 64 13-15
18. Puchert R, Menzel U, Voss M, Lier C and Bärwolff A 1997 Influence of heat source distribution in GaAs/GaAlAs quantum well high-power laser arrays on the temperature profile and thermal resistance J. Thermal Anal. 48 1273-82
19. Voss M, Lier C, Menzel U, Bärwolff A and Elsässer T 1996 Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks J. Appl. Phys. 79 1170-2
20. Menzel U, Bärwolff U, Enders P, Ackermann D, Puchert R and Voß M 1995 Modelling the temperature dependence of threshold current, external differential efficiency and lasing wavelength in QW laser diodes Semicond. Sci. Technol. 10 1382-92
21. Kesler M P and Harder C 1991 Spontaneous emission and gain in GaAlAs quantum well lasers IEEE J. Quantum Electron. 27 1812-16
22. Blakemore J S 1982 Semiconducting and other major properties of gallium arsenide J. Appl. Phys. 53 R123-R181
23. Press W H, Flannery B P, Teukolsky S A and Vetterling W T 1989 Numerical Recipes in Pascal (Cambridge: Cambridge University Press)
24. Tan G, Bewtra N, Lee K and Xu J M 1993 A two-dimensional nonisothermal finite element simulation of laser diodes IEEE J. Quantum Electron. 29 822-35
25. Strauss U, Rühle W W and Köhler K 1993 Auger recombination in intrinsic GaAs Appl. Phys. Lett. 62 55-7
26. Chinn S R, Zory P S and Reisinger A R 1988 A model for GRIN-SCH-SQW diode lasers IEEE J. Quantum Electron. 24 2191-214
27. Tang W C, Rosen H J, Vettinger P and Webb D J 1992 Comparison of the facet heating behavior between AlGaAs single quantum well lasers and double-heterojunction lasers SPIE 1634 198-202
28. Epperlein P 1993 Micro-temperature measurements on semiconductor laser mirrors by reflectance modulation: a newly developed technique for laser characterization Japan. J. Appl. Phys. 32 5514-22
29. Puchert R, Bärwolff R, Menzel U, Lau A, Voss M and Elsaesser T 1996 Facet and bulk heating of GaAs/AlGaAs high power laser arrays studied in spatially resolved emission and micro-Raman experiments J. Appl. Phys. 80 5559-63
30. xAs lasers J. Appl. Phys. 60 61-5
31. Epperlein P W and Bona S L 1993 Influence of the vertical structure on the mirror facet temperatures of visible GaInP quantum well lasers Appl. Phys. Lett. 62 3074-6
32. Brugger H and Epperlein PW 1990 Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes Appl. Phys. Lett. 56 1049-51
33. Epperlein P W, Bona G L and Roentgen P 1992 Local mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements Appl. Phys. Lett. 60 680-2
34. Krantz M C, Rosen H J and Lenth W 1990 Localised temperature dynamics of GaAlAs laser facets investigated by Raman microprobe measurements Electron. Lett. 26 990-2
35. Gu X J 1996 Simultaneous measurements of Stokes and anti-Stokes Raman spectra for thermal characterization of diode laser facet J. Raman Spectrosc. 27 83-5
36. Tang W C, Rosen H J, Vettinger P and Webb D J 1991 Raman microprobe study of the time development of AlGaAs single quantum well laser facet temperature on route to catastrophic breakdown Appl. Phys. Lett. 58 557-9
37. Altendorf E H, Tang W C and Rosen H J 1994 Raman study of the time evolution of the facet temperature of coated AlGaAs single-quantum-well lasers J. Appl. Phys. 75 5433-5
38. Cole J V and Lee H H 1993 A model for surface recombination velocity and lifetime of semiconductor lasers IEEE J. Quantum Electron. QE-29 322-6
39. Herrmann F U, Beeck S, Abstreiter G, Hanke C, Hoyler C and Korte L 1991 Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts Appl. Phys. Lett. 58 1007-9
40. Tang W C, Rosen H J, Vettinger P and Webb D J 1991 Evidence for current-density-induced heating of AlGaAs single-quantum-well laser facets Appl. Phys. Lett. 59 1005-7
41. Abramowitz M and Stegun I A (ed) 1970 Handbook of Mathematical Functions (New York: Dover)
42. Madelung O and Schulz M (eds) 1986 Numerical Data and Functional Relationship in Science and Technology Landolt-Börnstein New Series vol III/22a (Berlin: Springer)
43. 1-xAs: Material parameters for use in research and device applications J. Appl. Phys. 58 R1-R29