COB stack DRAM cell technology beyond 100 nm technology node

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 391-394

  Park, Yongjik ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RESISTANCE MEASUREMENT; MICROELECTRONIC PROCESSING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR STORAGE;

CORE CONTROL CIRCUIT; DATA RETENTION TIME; MEMORY CELL CAPACITOR; PARASITIC CAPACITANCE; PARASITIC RESISTANCE;

NANOTECHNOLOGY;

EID: 0035717044     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)