40 Gbps electroabsorption modulated DFB laser with tilted facet formed by dry etching

Semiconductor Science and Technology

Volumn 22, Issue 7, 2007, Pages 802-805

  Choe, Joong Seon ^a   Kwon, Yong Hwan ^a   Sim, Jae Sik ^a   Kim, Sung Bock ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTROABSORPTION MODULATORS; GROWTH (MATERIALS); LASER BEAM CUTTING; OPTICAL VARIABLES MEASUREMENT; RESONANCE;

ANTI-REFLECTION COATING; FACET REFLECTION; FREQUENCY RESONANCE;

DISTRIBUTED FEEDBACK LASERS;

EID: 34547315279     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/7/022     Document Type: Article

References (13)

1. Choe J-S, Kwon Y-H and Kim K 2005 Characteristics of waveguide photodetectors at high-power optical input IEEE Photonics. Technol. Lett. 17 881-3
2. Choe J-S, Kwon Y-H, Kim K, Kim J, Kong S-C and Choi Y-W 2004 Traveling-wave photodetector with asymmetrically heterostructured intrinsic region Japan. J. Appl. Phys. 43 5105-9
3. Kwon Y-H, Choe J-S, Kim J, Kim K, Choi K-S, Choi B-S and Yun H 2005 Fabrication of 40 Gb/s front-end optical receivers using spot-size converter integrated waveguide photodiodes ETRI J. 27 484-90
4. Kong S-C, Ok S-H, Choi Y-W, Choe J-S, Kwon Y-H and Kim J-H 2003 Numerical analysis and design of a new traveling-wave photodetector with an asymmetric i-layer cross section IEEE J. Sel. Top. Quantum Electron. 9 770-5
5. Kawanishi H, Yamauchi Y, Mineo N, Shibuya Y, Mural H, Yamada K and Wada H 2001 EAM-integrated DFB laser modules with more than 40-GHz bandwidth IEEE Photonics. Technol. Lett. 13 954-6
6. Milind R Gokhale, Studenkov P V, Ueng-McHale J, Thomson J, Yao J and van Saders J 2003 Uncooled, 10 Gb/s 1310 nm electroabsorption modulated laser Optical Fiber Communications Conf. vol 3 pp PD42-P1-3
7. Johnson J E, Morton P A, Tanbuk-Ek T and Tsang W T 1995 Integrated electroabsorption modulators for WDM systems IEEE Lasers and Electro-Optics Society Annual Meeting (1995) vol 1 pp 124-5
8. Salvatore R A, Sahara R T, Bock M A and Libenzon I 2002 Electroabsorption modulated laser for long transmission spans IEEE J. Quantum Electron. 38 44-476
9. Park B H, Kim In, Kang B-K, Bae Y-D, Lee S-M, Kim Y H, Jang D H and Kim T-I 2005 Investigation of optical feedback in high-speed electroabsorption modulated lasers with a window region IEEE Photonics. Technol. Lett. 17 777-9
10. Aoki M, Komori M, Tsuchiya T, Sato H, Nakahara K and Uomi K 1997 InP-based reversed-mesa ridge-waveguide structure for high-performance long-wavelength laser diode IEEE J. Sel. Top. Quantum Electron. 3 672-83
11. Jaskorzynska B and Nilsson J 1991 Modal reflectivity of uptapered, tilted-facet, and antireflection-coated diode-laser amplifiers J. Opt. Soc. Am. B 8 484-93
12. Suzuki M, Tanaka H, Akiba S and Kushiro Y 1988 Electrical and optical interactions between integrated InGaAsP/InP DFB lasers and electroabsorption modulators J. Lightwave Technol. 6 779-85
13. Agrawal G P and Dutta N K 1993 Semiconductor Lasers 2nd edn (New York: Van Nostrand Reinhold)