Monolithic integration of low-temperature-grown GaAs with a two-dimensional electron gas

Semiconductor Science and Technology

Volumn 22, Issue 7, 2007, Pages 811-813

  Cunningham, J ^a   Upadhya, P C ^a   Tiang, C K ^a   Lachab, M ^a   Khanna, S ^a   Linfield, E H ^a   Davies, A G ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; EPITAXIAL GROWTH; LOW TEMPERATURE OPERATIONS; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

MESOSCOPIC SYSTEMS; MONOLITHIC INTEGRATION; QUANTUM HALL BEHAVIOUR; TWO-DIMENSIONAL ELECTRON GAS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 34547259569     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/7/024     Document Type: Article

References (9)

1. Mittleman D M, Cunningham J, Nuss M C and Geva M 1997 Appl. Phys. Lett. 71 16
2. Some D and Nurmikko A V 1994 Appl. Phys. Lett. 65 3377
3. Kono J, Chin A C and Mitchell A P 1999 Appl. Phys. Lett. 75 1119
4. Shaner E A and Lyon S A 2004 Phys. Rev. Lett. 93 037402
5. Shaner E A and Lyon S A 2002 Phys. Rev. B 66 041402
6. Ogawa K, Allam J, de B Baynes N, Cleaver J R A, Mishima T and Ohbu I 1995 Appl. Phys. Lett. 66 1228
7. Luo J K, Thomas H, Morgan D V and Westwood D 1996 J. Appl. Phys. 79 3622
8. Shen Y C, Upadhya P C, Linfield E H and Davies A G 2003 Appl. Phys. Lett. 82 2350
9. Wood C, Cunningham J, Upadhya P C, Linfield E H, Hunter I C, Davies A G and Missous M 2006 Appl. Phys. Lett. 88 142103