Noncontact semiconductor wafer characterization with the terahertz Hall effect

Applied Physics Letters

Volumn 71, Issue 1, 1997, Pages 16-18

  Mittleman, D M ^a,c   Cunningham, J ^a   Nuss, M C ^a   Geva, M ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c RICE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARACTERIZATION; ELECTRIC CONTACTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; INFRARED RADIATION; LIGHT POLARIZATION; MAGNETIC FIELD EFFECTS; OPTICAL RESOLVING POWER; SEMICONDUCTOR DOPING;

DRUDE THEORY; HALL MOBILITY; NONCONTACT SEMICONDUCTOR WAFER; POLARIZATION ROTATION; TERAHERTZ HALL EFFECT;

SEMICONDUCTOR MATERIALS;

EID: 0031558174     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119456     Document Type: Article

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