Wet and dry porous silicon

Current Opinion in Colloid and Interface Science

Volumn 4, Issue 4, 1999, Pages 309-313

  Koshida, Nobuyoshi ^a   Gelloz, Bernard ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Confinement; Electroluminescence; Nanocomposites; Nanocrystallites; Porous silicon; Quantum functions; Surface modification

Indexed keywords

SILICON;

CRYSTAL STRUCTURE; LUMINESCENCE; REVIEW;

EID: 0033451915     PISSN: 13590294     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0294(99)90009-2     Document Type: Review

References (43)

1. Canham L. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl Phys Lett. 57:1990;1046-1048.
2. Koshida N., Koyama H. Efficient visible photoluminescence from porous silicon. Jpn J Appl Phys. 30:1991;L1221-L1223.
3. Lehmann V., Gosel U. Porous silicon formation: a quantum wire effect. Appl Phys Lett. 58:1991;856-858.
4. Cullis A.G., Canham L., Calcott P.D.J. Structural and luminescence properties of porous silicon. J Appl Phys. 82:1997;909-965.
5. Bsiesy A., Gelloz B., Gaspard F., Muller F. Origin of the charge carriers accumulation/depletion in porous silicon contacted by a liquid phase. J Appl Phys. 79:1996;2513-2516.
6. Gelloz B., Bsiesy A. Carrier transport mechanism in porous silicon in contact with a liquid phase: a diffusion process. Appl Surf Sci. 135:1998;15-22.
7. Bsiesy A., Muller F., Mihalcescu I. et al. Electrically induced selective quenching of porous silicon photoluminescence. J Lumin. 57:1993;29-32.
8. Mihalcescu I., Vial J.C., Bsiesy A. et al. Saturation and voltage quenching of porous-silicon luminescence and importance of the Auger effect. Phys Rev B. 51:1995;17605-17613.
9. Koyama H., Oguro T., Koshida N. Electrical quenching of photoluminescence from porous silicon. Appl Phys Lett. 62:1993;3177-3179.
10. Gelloz B, Bsiesy A, Koshida N. Conduction and luminescent properties of wet porous silicon. In: Canham L, Parkhutik V, editors. Ext Abst Int Conf Porous semiconductors - science and technology. Mallorca, Spain. Valentia: Tech Univ of Valencia, 1998:56-57 (to be published in J. Porous Mater. 2000;7:103-106).
11. Gelloz B, Bsiesy A, Koshida N. Conduction and luminescent properties of wet porous silicon. In: Canham L, Parkhutik V, editors. Ext Abst Int Conf Porous semiconductors - science and technology. Mallorca, Spain. Valentia: Tech Univ of Valencia, 1998:56-57 (to be published in J. Porous Mater. 2000;7:103-106).
12. Gelloz B., Bsiesy A., Herino R. Light-induced porous silicon photoluminescence quenching. J Lumin. 82:1999;205-211.
13. Cox TI. Electroluminescence from porous silicon using solid state contacts. In: Canham L, editor. EMIS data review series no. 18, properties of porous silicon. London: INSPEC IEE, 1997:290-310.
14. Gros-Jean M., Herino R., Lincot D. Incorporation of cadmium sulfide into nanoporous silicon by sequential chemical deposition from solution. J Electrochem Soc. 145:1998;2448-2452.
15. Montes L, Muller F, Herino R. Localized photo-assisted electro-deposition of zinc selenide into p-type porous silicon. In: Canham L, Parkhutik V, editor. Ext Abst Int Conf Porous semiconductors-science and technology, Mallorca, Spain. Valencia: Tech Univ of Valencia, 1998:56-57 (to be published in J. Porous Mater 2000;7:77-80).
16. Montes L, Muller F, Herino R. Localized photo-assisted electro-deposition of zinc selenide into p-type porous silicon. In: Canham L, Parkhutik V, editor. Ext Abst Int Conf Porous semiconductors-science and technology, Mallorca, Spain. Valencia: Tech Univ of Valencia, 1998:56-57 (to be published in J. Porous Mater 2000;7:77-80).
17. Buriak J.M., Allen M.J. Lewis acid mediated functionalization of porous silicon with substituted alkenes and alkynes. J Am Chem Soc. 120:1998;1339-1342.
18. Kim N.Y., Laibinis P.E. Thermal derivatization of porous silicon with alcohols. J Am Chem Soc. 119:1997;2297-2298.
19. Li K.H., Tsai C., Campbell J.C., Kovar M. The effect of surface species on the photoluminescence of porous silicon. J Electr Mater. 23:1994;409.
20. VanderKam S.K., Bocarsly A.B., Schwartz J. Enhanced bonding of poly(ethylene-co-acrylic acid) to oxides through surface-bound alkoxyzirconium complex interfaces. Chem Mater. 10:1998;685-687.
21. Kim N.Y., Laibinis P.E. Functionalization of porous silicon surfaces by solution-phase reactions with alcohols and grignard reagents. Mater Res Soc Symp Proc. 536:1999;167-172.
22. Zhang Y.H., Li X.J., Zheng L., Chen Q.W. Nondegrading photoluminescence in porous silicon. Phys Rev Lett. 81:1998;1710-1713.
23. Dancil K.P.S., Greiner D.P., Gurtner C., Sailor M.J. Development of a porous silicon based biosensor. Mater Res Soc Symp Proc. 536:1999;557-562.
24. Li X., Coffer J.L., Chen Y., Pinizzotto R.F., Newey J., Canham L. Transition metal complex-doped hydroxyapatite layers on porous silicon. J Am Chem Soc. 120:1998;11706-11709.
25. Zangooie S., Jansson R., Arwin H. Microstructural control of porous silicon by electrochemical etching in mixed HCl/HF solutions. Appl Surf Sci. 136:1998;123-130.
26. Mizuno H., Koyama H., Koshida N. Oxide-free blue photoluminescence from photochemically etched porous silicon. Appl Phys Lett. 69:1996;3779-3781.
27. Mizuno H., Koshida N. Enhancement in efficiency and stability of oxide-free blue emission from porous silicon by surface passivation. Mater Res Soc Symp Proc. 536:1999;179-284.
28. Suda Y., Obata K., Koshida N. Band dispersions in photoluminescent porous Si. Phys Rev Lett. 80:1998;3559-3562.
29. Koshida N. Dielectric constant of porous silicon. In: Canham L, editor. EMIS data review series no. 18, properties of porous silicon. London: INSPEC IEE, 1997:234-237.
30. Theiss W, Hilbrich S. Refractive index of porous silicon. In: Canham L, editor. EMIS data review series no. 18, properties of porous silicon. London: INSPEC IEE, 1997:223-228.
31. Witt A.N., Gordon K.D., Furton D.G. Silicon nanoparticles: Source of extended red emission? Astrophys J. 501:1998;L111-L116.
32. Zubko V.G., Smith T.L., Witt A.N. Silicon nanoparticles and interstellar extinction. Astrophys J. 511:1999;L57-L60.
33. Gelloz B., Nakagawa T., Koshida N. Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation. Appl Phys Lett. 73:1998;2021-2023.
34. Gelloz B., Nakagawa T., Koshida N. Enhancing the external quantum efficiency of porous silicon LEDs beyond 1% by a postanodization electrochemical oxidation. Mater Res Soc Symp Proc. 536:1999;15-20.
35. Araki M., Takahashi M., Koyama H., Koshida N. Performances of porous silicon optical waveguides. Mater Res Soc Symp Proc. 486:1998;107-112.
36. Takahashi M., Araki M., Koshida N. Buried optical waveguides of porous silicon. Jpn J Appl Phys. 37:1998;L1017-L1019.
37. Ueno K., Koyama H., Koshida N. Negative-resistance effect in electroluminescent porous silicon diodes. Jpn J Appl Phys. 37:1998;1096-1098.
38. Ueno K., Koyama H., Koshida N. Light-emissive nonvolatile memory effects in porous silicon diodes. Appl Phys Lett. 74:1999;93-95.
39. Koshida N., Ozaki T., Sheng X., Koyama H. Cold electron emission from electroluminescent porous silicon diodes. Jpn J Appl Phys. 34:1995;L705-L707.
40. Sheng X., Koyama H., Koshida N. Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes. J Vac Sci Technol B. 16:1998;793-795.
41. Koshida N., Sheng X., Komoda T. Quasiballistic electron emission from porous silicon diodes. Appl Surf Sci. 661:1999;371-376.
42. Koshida N., Nakajima T., Yoshiyama M., Ueno K., Nakagawa T., Shinoda H. Ultrasound emission from porous silicon: efficient thermo-acoustic function as a depleted nanocrystalline system. Mater Res Soc Symp Proc. 536:1999;105-110.
43. Lang W. Thermal conductivity of porous silicon. In: Canham L, editor. EMIS Data review series no. 18, properties of porous silicon. London: INSPEC IEE, 1997:138-141.